MW6S004NT1 Datasheet (Freescale Semiconductor) - RF Power Field Effect Transistor

MW6S004NT1, RF Power Field Effect Transistor

100 nF Chip Capacitor 9.1 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 10 μF, 35 V Tantalum Chip Capacitor 1 kΩ, 1/4 W Chip Resistor 10 kΩ, 1/4 W Chip Resistor 10 Ω, 1/4 W Chip Resistor Part Number CDR33BX104AKYS ATC600B9R1CT500XT GRM55DR61H106KA88B T490D106K035AT CRCW12061000FKTA CRCW12061001FKTA

Freescale Semiconductor Technical Data Document Number: MW6S004N Rev.

2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz.

Suitable for analog and digital modulation and multicarrier amplifier applications.

Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain 18 dB Drain Efficiency 33% IMD <

MW6S004NT1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* On - Chip RF Feedback for Broadband Stability

* Integrated ESD Protection

* RoHS Compliant

* In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MW6S004NT1 1 - 2000 MHz