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MW6S004NT1 RF Power Field Effect Transistor

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Description

Freescale Semiconductor Technical Data Document Number: MW6S004N Rev.2, 2/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lat.
100 nF Chip Capacitor 9.

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Datasheet Specifications

Part number
MW6S004NT1
Manufacturer
Freescale Semiconductor
File Size
522.37 KB
Datasheet
MW6S004NT1_FreescaleSemiconductor.pdf
Description
RF Power Field Effect Transistor

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip RF Feedback for Broadband Stability
* Integrated ESD Protection
* RoHS Compliant
* In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MW6S004NT1 1 - 2000 MHz

Applications

* with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
* Typical Two - Tone Performance @ 1960 MHz, 28 Volts, IDQ = 50 mA, Pout = 4 Watts PEP Power Gain
* 18 dB Drain Efficiency
* 33% IMD
* - 34 dBc

MW6S004NT1 Distributors

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Power Field Effect Transistor Freescale Semiconductor
Freescale Semiconductor MW6S004NT1-like datasheet