MW6IC2420NBR1 Datasheet (Freescale Semiconductor) - RF LDMOS Integrated Power Amplifier

MW6IC2420NBR1, RF LDMOS Integrated Power Amplifier

2.2 μF Chip Capacitors 100 nF Chip Capacitors 0.5 pF Chip Capacitors 6.8 pF Chip Capacitor 2.2 pF Chip Capacitor 1 pF Chip Capacitor 5.6 pF Chip Capacitors 0.3 pF Chip Capacitor 0.5 pF Chip Capacitor 5 kΩ Potentiometer CMS Cermet Multi - turn Part Number C32225X5R1H225MT C1206C104K1KAC 08051J0R5BS 0

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2420N Rev.

0, 3/2007 RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on - chip matching that makes it usable at 2450 MHz.

This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats.

Driver Applications Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA

MW6IC2420NBR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters

* On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)

* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function

* Int