* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip RF Feedback for Broadband Stability
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant
MW6S010GNR1 Datasheet (790.04 KB)
MW6S010GNR1
790.04 KB
Rf power field effect transistors.
Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class .
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