MW6S010GNR1, MW6S010NR1 - RF Power Field Effect Transistors

NXP

Datasheet Details

Part number	MW6S010GNR1, MW6S010NR1
Manufacturer	NXP ↗
File Size	790.04 KB
Description	RF Power Field Effect Transistors
Datasheet	MW6S010NR1-NXP.pdf
Note	This datasheet PDF includes multiple part numbers: MW6S010GNR1, MW6S010NR1. Please refer to the document for exact specifications by model.

Part Number 2743019447 C1, C6, C11, C20 47 pF Chip Capacitors ATC100B470JT500XT C2, C18, C19 C3, C16 C4, C15 22 μF, 35 V Tantalum C

Characterized with Series Equivalent Large - Signal Impedance Parameters.
On - Chip RF Feedback for Broadband Stability.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
225°C Capable Plastic Package.
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. Document Number: MW6S010N Rev. 5, 6/2009 MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V.

📁 MW6S010GNR1 Similar Datasheet

MW6S004NT1 - RF Power Field Effect Transistor (Freescale Semiconductor)
MW601 - InSb Hall (Matrixopto)
MW6208 - USB 2.0 FLASH DISK CONTROLLER (AMECO)
MW621ST - Digital Projector User Manual (BenQ)
MW6IC2015GNBR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MW6IC2015NBR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MW6IC2240GNBR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)
MW6IC2240NBR1 - RF LDMOS Wideband Integrated Power Amplifiers (Freescale Semiconductor)

Other Datasheets by NXP

Published: Sep 15, 2024 |