MW6S010GNR1 Datasheet - NXP

MW6S010GNR1 RF Power Field Effect Transistors

Part Number 2743019447 C1, C6, C11, C20 47 pF Chip Capacitors ATC100B470JT500XT C2, C18, C19 C3, C16 C4, C15 22 μF, 35 V Tantalum C.

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain 18 dB Drain Efficiency 32% IMD - 37 dBc Capable of.

MW6S010GNR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* On - Chip RF Feedback for Broadband Stability

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant

MW6S010GNR1 Datasheet (790.04 KB)