Datasheet4U Logo Datasheet4U.com

MW6S010MR1 Datasheet - NXP

MW6S010MR1 RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volt.

MW6S010MR1-NXP.pdf

Preview of MW6S010MR1 PDF
MW6S010MR1 Datasheet Preview Page 2 MW6S010MR1 Datasheet Preview Page 3

Datasheet Details

Part number:

MW6S010MR1

Manufacturer:

NXP ↗

File Size:

711.54 KB

Description:

Rf power field effect transistor.

📁 Related Datasheet

MW6S010GMR1 RF Power Field Effect Transistor (NXP)

MW6S010GNR1 RF Power Field Effect Transistors (NXP)

MW6S010GNR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs (Freescale Semiconductor)

MW6S010NR1 RF Power Field Effect Transistors (NXP)

MW6S010NR1 LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs (Freescale Semiconductor)

MW6S004NT1 RF Power Field Effect Transistor (Freescale Semiconductor)

MW601 InSb Hall (Matrixopto)

MW6208 USB 2.0 FLASH DISK CONTROLLER (AMECO)

TAGS

MW6S010MR1 MW6S010MR1 Power Field Effect Transistor NXP

MW6S010MR1 Distributor