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MW6S010MR1 RF Power Field Effect Transistor

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Description

Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1.There are no form, fit or function changes with this part replacement.N suffix in.

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Datasheet Specifications

Part number
MW6S010MR1
Manufacturer
NXP ↗
File Size
711.54 KB
Datasheet
MW6S010MR1-NXP.pdf
Description
RF Power Field Effect Transistor

Applications

* with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
* Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain
* 18 dB Drain Efficiency
* 32% IMD
* - 37 dBc

MW6S010MR1 Distributors

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Power Field Effect Transistor NXP
NXP MW6S010MR1-like datasheet