MW6S010MR1 Datasheet (NXP) - RF Power Field Effect Transistor

MW6S010MR1, RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1.

There are no form, fit or function changes with this part replacement.

N suffix indicates RoHS compliant part.

RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.

Suitable for analog and digital modulation and multicarrier amplifier applications.

Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volt