Datasheet Details
Part number:
MW6S010GMR1, MW6S010MR1
Manufacturer:
File Size:
711.54 KB
Description:
Rf power field effect transistor.
Note:
This datasheet PDF includes multiple part numbers: MW6S010GMR1, MW6S010MR1.
Please refer to the document for exact specifications by model.
MW6S010GMR1, MW6S010MR1, RF Power Field Effect Transistor
Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1.
There are no form, fit or function changes with this part replacement.
N suffix indicates RoHS compliant part.
RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.
Suitable for analog and digital modulation and multicarrier amplifier applications.
Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volt
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