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MW6S010GMR1 Datasheet - NXP

MW6S010GMR1 RF Power Field Effect Transistor

Freescale Semiconductor Technical Data Replaced by MW6S010NR1/GNR1. There are no form, fit or function changes with this part replacement. N suffix indicates RoHS compliant part. RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. Typical Two - Tone Performance @ 960 MHz, VDD = 28 Volt.

MW6S010GMR1 Datasheet (711.54 KB)

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Datasheet Details

Part number:

MW6S010GMR1

Manufacturer:

NXP ↗

File Size:

711.54 KB

Description:

Rf power field effect transistor.

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