MW6IC2240GNBR1 Datasheet (Freescale Semiconductor) - RF LDMOS Wideband Integrated Power Amplifiers

MW6IC2240GNBR1, RF LDMOS Wideband Integrated Power Amplifiers

1.5 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 4.7 µF Chip Capacitors (1812) 8.2 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 18 kW, 1/4 W Chip Resistor (1206) 8.2 kW, 1/4 W Chip Resistor (1206) Part Number 100B1R5BW 100B1R8BW 100B6R8CW C4532X5R1H475MT 100B8R

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev.

1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz.

This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

Final Application Typical 2 -Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA

MW6IC2240GNBR1 Features

* W) 51 49 47 45 43 41 39 10 12 14 16 18 20 P1dB = 47 dBm (50 W) Figure 10. Intermodulation Distortion Products versus Tone Spacing Ideal Actual VDD = 28 Vdc, IDQ1 = 110 mA IDQ2 = 370 mA, Pulsed CW 8 µsec(on), 1 msec(off) f = 2140 MHz 22 24 26 28 30 Pin, INPUT POWER (dBm) Figure 11. Pulse CW Ou