MW6IC2240GNBR1 - RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor

MW6IC2240GNBR1 Datasheet Preview — Preview of MW6IC2240GNBR1 PDF

Datasheet Details

Part number	MW6IC2240GNBR1
Manufacturer	Freescale Semiconductor
File Size	511.20 KB
Description	RF LDMOS Wideband Integrated Power Amplifiers
Datasheet	MW6IC2240GNBR1_FreescaleSemiconductor.pdf

MW6IC2240GNBR1 Product details

Description

1.5 pF 100B Chip Capacitors 1.8 pF 100B Chip Capacitor 6.8 pF 100B Chip Capacitors 4.7 µF Chip Capacitors (1812) 8.2 pF 100B Chip Capacitor 0.5 pF 100B Chip Capacitor 18 kW, 1/4 W Chip Resistor (1206) 8.2 kW, 1/4 W Chip Resistor (1206) Part Number 100B1R5BW 100B1R8BW 100B6R8CW C4532X5R1H475MT 100B8R2CW 100B0R5BW Manufacturer ATC ATC ATC TDK ATC ATC MW6IC2240NBR1 MW6IC2240GNBR1 4 RF Device Data Freescale Semiconductor VD1 VD2 C13 C4 C6 CUT OUT AREA MW6IC2240, Rev.1 C3 C1 C9 C8 C2 C10 C12

Features

W) 51 49 47 45 43 41 39 10 12 14 16 18 20 P1dB = 47 dBm (50 W) Figure 10. Intermodulation Distortion Products versus Tone Spacing Ideal Actual VDD = 28 Vdc, IDQ1 = 110 mA IDQ2 = 370 mA, Pulsed CW 8 µsec(on), 1 msec(off) f = 2140 MHz 22 24 26 28 30 Pin, INPUT POWER (dBm) Figure 11. Pulse CW Output Power versus Input Power PAE, POWER ADDED.

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Published: Apr 5, 2007 |