MW6IC2015GNBR1 RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor

Description

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev.2, 2/2007 RF LDMOS Wideband Integrated Power Amplifiers.
2.

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Datasheet Specifications

Part number: MW6IC2015GNBR1
Manufacturer: Freescale Semiconductor
File Size: 1.12 MB
Datasheet: MW6IC2015GNBR1_FreescaleSemiconductor.pdf
Description: RF LDMOS Wideband Integrated Power Amplifiers

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters
* On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
* Int

Applications

* It uses Freescale’s newest High Voltage (26 to 32 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband on - chip design makes it usable from 1805 to 1990 MHz. The linearity performances cover all modulation formats for cellular applications: GSM, GSM EDGE, PHS, TDMA, CD

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MW6IC2015GNBR1 LDMOS Wideband Integrated Power Amplifiers Freescale Semiconductor

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