MW6S010NR1 Datasheet (NXP) - RF Power Field Effect Transistors

MW6S010NR1, RF Power Field Effect Transistors

Part Number 2743019447 C1, C6, C11, C20 47 pF Chip Capacitors ATC100B470JT500XT C2, C18, C19 C3, C16 C4, C15 22 μF, 35 V Tantalum C

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz.

Suitable for analog and digital modulation and multicarrier amplifier applications.

Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain 18 dB Drain Efficiency 32% IMD - 37 dBc Capable of

MW6S010NR1 Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* On - Chip RF Feedback for Broadband Stability

* Qualified Up to a Maximum of 32 VDD Operation

* Integrated ESD Protection

* 225°C Capable Plastic Package

* RoHS Compliant