MW6S010NR1 Datasheet - NXP

MW6S010NR1, RF Power Field Effect Transistors

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class .
Part Number 2743019447 C1, C6, C11, C20 47 pF Chip Capacitors ATC100B470JT500XT C2, C18, C19 C3, C16 C4, C15 22 μF, 35 V Tantalum C.

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MW6S010NR1-NXP.pdf

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Datasheet Details

Part number:

MW6S010NR1

Manufacturer:

NXP ↗

File Size:

790.04 KB

Description:

RF Power Field Effect Transistors

Features

* Characterized with Series Equivalent Large - Signal Impedance Parameters
* On - Chip RF Feedback for Broadband Stability
* Qualified Up to a Maximum of 32 VDD Operation
* Integrated ESD Protection
* 225°C Capable Plastic Package
* RoHS Compliant

Applications

* with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
* Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain
* 18 dB Drain Efficiency
* 32% IMD
* - 37 dBc

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