NTD Datasheet | Specifications & PDF Download

MOSFET – Power, N-Channel, DPAK 20 A, 60 V NTD20N06, NTDV20N06 Description Designed for low voltage, high speed switching applications in power suppli

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NTD25P03LG P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.033 at VGS = - 10 V 0.046 at VGS = - 4.5 V ID (A)d - 26 - 21

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www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem

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NTD24N06 Power MOSFET 60 Volt, 24 Amp N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and pow

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2003 THRU 2024 HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 Ideally suited for interfacing between low-level

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT November 2013 FGA25N120ANTD 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Tem

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V NTD3055L104, NTDV3055L104 Designed for low voltage, high speed switching applications in

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2436 COUNTDOWN POWER TIMER 2436 COUNTDOWN POWER TIMER Data Sheet 27462.20A COUNTER OSC. GROUND OUTPUT TOGGLE 1 2 3 4 F/F 8 7 6 MODE SELECT NO

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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Naina Semiconductor Ltd. NTD122C Features Thyristor/Diode Module, 130A • Improved glass passivation for high reliability • Exceptional stability a

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NTD85N02R Power MOSFET, 85 A, 24 V, N-Channel DPAK/IPAK Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Condu

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www.DataSheet4U.com NTD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS(on) to Minimize Conduction Losses Low Ca

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www.DataSheet4U.com NTD3055−150 Power MOSFET 9.0 A, 60 V N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies

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NTD5804N, NTDV5804N, SVD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Spe

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Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • • Improved glass passivation for high reliability Exceptional stabilit

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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NTD110N02R, STD110N02R MOSFET – Power, N-Channel, DPAK 24 V, 110 A Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Mi

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NTD110N02R-001G-VB NTD110N02R-001G-VB Datasheet N-Channel 20-V (D-S)175 _C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.0045 @ VGS

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