NTD Datasheet | Specifications & PDF Download

MOSFET – Power, N-Channel, DPAK/IPAK 12 A, 60 V NTD3055-094,  NVD3055-094 Designed for low voltage, high speed switching applications in power supplie

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NTD20N03L27, NVD20N03L27 MOSFET –Power, N-Channel, DPAK 20 A, 30 V This logic level vertical power MOSFET is a general purpose part that provides t

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NTD24N06L, STD24N06L MOSFET – Power, N-Channel, Logic Level, DPAK 24 A, 60 V Designed for low voltage, high speed switching applications in power su

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MOSFET – Power, N-Channel, Logic Level, DPAK/IPAK 12 A, 60 V NTD3055L104, NTDV3055L104 Designed for low voltage, high speed switching applications in

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NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and p

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www.DataSheet4U.com NTD3055−150 Power MOSFET 9.0 A, 60 V N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies

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NTD32N06L Power MOSFET 32 Amps, 60 Volts, Logic Level N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, co

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NTD30N02 Power MOSFET 30 Amps, 24 Volts N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and p

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NTD20P06LT4G NTD20P06LT4G Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) 0.061 at V GS = - 10 V 0.072 at VGS = -

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NTD6416ANL N-Channel Power MOSFET 100 V, 19 A, 74 mW Features • • • • Low RDS(on) High Current Capability 100% Avalanche Tested These are Pb−Free De

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NTD4963N Power MOSFET Features 30 V, 44 A, Single N−Channel, DPAK/IPAK • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimiz

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NTD5803N Power MOSFET 40 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) • High Current Capability • Avalanche Energy Specified • These a

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NTD5865N N-Channel Power MOSFET 60 V, 43 A, 18 mW Features • Low Gate Charge • Fast Switching • High Current Capability • 100% Avalanche Tested • Th

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FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features • NPT Trench Technology, Positive Temperature Co

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NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI

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NTD4970N MOSFET – Power, Single, N-Channel, DPAK/IPAK 30 V, 36 A Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize

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Naina Semiconductor Ltd. NTD57A Features Thyristor/Diode Module, 50A • Improved glass passivation for high reliability • Exceptional stability at

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NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Min

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MOSFET - Power, N‐Channel, SUPERFET) III, FAST 650 V, 250 mW, 13 A NTD250N65S3H Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high v

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NTD20P06L, NTDV20P06L MOSFET – Power, Single, P-Channel, DPAK -60 V, -15.5 A Features • Withstands High Energy in Avalanche and Commutation Modes •

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