Normally-On Datasheet | Specifications & PDF Download

PRELIMINARY Silicon Carbide SJEP120R063 Normally-OFF Trench Silicon Carbide Power JFET Features: - Compatible with Standard Gate Driver ICs - Pos

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NS5B1G384 Single (NC) Normally Closed SPST Analog Switch The NS5B1G384 is Single Pole Single Throw (SPST) high-speed TTL-compatible switch. The low re

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Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Ope

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MC74VHC1G66, NLVHC1G66 SPST (NO) Normally Open Analog Switch The MC74VHC1G66, NLVHC1G66 is a single pole single throw (SPST) analog switch. It achieve

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MC74VHC1GT66, NLVHC1GT66 SPST (NO) Normally Open Analog Switch The MC74VHC1GT66, NLVHC1GT66 is a Single Pole Single Throw (SPST) analog switch. It ach

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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope

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Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - Extremely Fast Switching with No

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NTE861 Integrated Circuit Quad, Normally Open, SPST JFET Analog Switch w/Disable Description: The NTE861 is a monolithic combination of bipolar and JF

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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope

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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope

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ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET FEATURES: Die Inside • Hermetic TO-258 Packaging • 200°C

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FSA66 Low-Voltage UHS Single SPST Normally Open Analog Switch June 2006 FSA66 Low-Voltage UHS Single SPST Normally Open Analog Switch Features ■ Spa

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GA10JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features  250 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Except

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DATASHEET UJ4N075004L8S TAB 1 8 TAB G (1) KS (2) 8 1 D (TAB) S (3-8) Part Number UJ4N075004L8S Package MO-229 Marking UJ4N075004 Silicon C

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DATASHEET UF3N090350Z 900V-330mW SiC Normally-on JFET Rev. B, January 2020 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET

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Silicon Carbide SJDP120R085 Normally-On Trench Silicon Carbide Power JFET Features: - Positive Temperature Coefficient for Ease of Paralleling - E

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INTEGRATED CIRCUITS DIVISION Characteristics Parameter Blocking Voltage Load Current, TA=25°C: With 5°C/W Heat Sink No Heat Sink On-Resistance (max)

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DATASHEET UF3N065300Z 650V-265mW SiC Normally-on JFET Rev. B, January 2020 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET

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