ON Semiconductor Datasheet | Specifications & PDF Download

MMBT5087L Low Noise Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requir

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MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for Paralle

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www.fairchildsemi.com FSDM0565R Green Mode Fairchild Power Switch (FPSTM) Features • Internal Avalanche Rugged Sense FET • Advanced Burst-Mode operat

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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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Green Mode Power Switch FSDH321, FSDL321 Description Each product in the FSDx321 (x for H, L) family consists of an integrated Pulse Width Modulator

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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isc Adjustable Voltage Regulator INCHANGE Semiconductor LM317 FEATURES ·Output Voltage Range :1.2V to 37V ·Output Current In Excess of 1.5A ·0.1% Li

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isc Three Terminal Positive Voltage Regulator 7812 FEATURES ·Output current in excess of 1.5A ·Output voltage of 12V ·Internal thermal overload prot

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54LS194A DM74LS194A 4-Bit Bidirectional Universal Shift Register June 1989 54LS194A DM74LS194A 4-Bit Bidirectional Universal Shift Register General

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DM74LS00 Quad 2-Input NAND Gate August 1986 Revised March 2000 DM74LS00 Quad 2-Input NAND Gate General Description This device contains four indepen

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INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION ·Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High

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HT73xx Series Low Power Consumption LDO Features • Ultra low quiescent current: 3.5µA (typ.) • High input voltage (up to 12V) • Output voltage: 1.8V,

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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KA317 / LM317 — 3-Terminal Positive Adjustable Regulator KA317 / LM317 3-Terminal Positive Adjustable Regulator September 2014 Features • Output-Cu

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XC62K Series Negative Voltage Regulators ETR0313_007a ■GENERAL DESCRIPTION The XC62K series are highly precise, low power consumption, negative volt

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications 2SC4207 Unit: mm  Small

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BCD DECADE COUNTERS/ 4-BIT BINARY COUNTERS The LS160A / 161A / 162A / 163A are high-speed 4-bit synchronous counters. They are edge-triggered, synchro

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74HC595 8−Bit Serial−Input/Serial or Parallel−Output Shift Register with Latched 3−State Outputs High−Performance Silicon−Gate CMOS The 74HC595 consi

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