P30 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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Integrated Driver and MOSFET NCP302045 Description The NCP302045 integrates a MOSFET driver, high-side MOSFET and low-side MOSFET into a single pack

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RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation v

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RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching:

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DATA SHEET www.onsemi.com Integrated Driver and MOSFET with Integrated Current Monitor NCP303150 Description The NCP303150 integrates a MOSFET driver

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P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RA

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DP3090 Trench N-MOSFET 30V, 3.2mΩ, 90A Features • Uses advanced Trench MOS technology • Extremely low on-resistance RDS(on) RDS(on) typ. • Excellent

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Integrated Driver and MOSFET NCP302155 The NCP302155 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a single package. The drive

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P3057LD TO-252 (DPAK) D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 50mΩ ID 12A 1.

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® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) =

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NX5P3001 Bidirectional high-side power switch for charger and USB-OTG applications Rev. 2.0 — 17 May 2023 Product data sheet 1 General description

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Druckkontaktierter IGBT Press Pack IGBT Technische Information / technical information P3000ZL45X168 Key Parameters VCES IC nom ICRM ISC RthJC F 45

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DATA SHEET www.onsemi.com Voltage Detector Series NCP300, NCP301 The NCP300 and NCP301 series are second generation ultra−low current voltage detecto

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www.DataSheet.co.kr FFA60UP30DN Ultrafast Recovery Power Rectifier FFA60UP30DN Ultrafast Recovery Power Rectifier Features • Ultrafast with Soft Rec

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P30FC POWER RELAY P30FC - 1C - 12VDC Relay Type: Contact Form: 1C/2C Coil Voltage:- 6 ~ 240VDC 6 ~ 240VAC Dimension L * W * H (mm) Features Termina

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SEMICONDUCTOR MTP300 Series RRooHHSS Nell High Power Products Three-Phase Bridge Rectifier, 300A MTP30008 Thru MTP30018 4-ø6.50 ~ 51.00 ~ ~ 67.0

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DATA SHEET www.onsemi.com Integrated Driver and MOSFET with Integrated Current Monitor NCP303152 Description The NCP303152 integrates a MOSFET driver

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Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features  T

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