P30 Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturation Volta

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http://www.fujielectric.com/products/semiconductor/ 6MBP30VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 30A / IPM Features Low-side IGBTs a

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RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation v

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P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 90mΩ @VGS = 10V 12A TO-252 ABSOLUTE MAXIMUM RA

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Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features  T

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SFA66UP30DN Ultrafast Dual Diode SFA66UP30DN 66A, 300V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: Trr=49ns (max) • Typical Forward Volt

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3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from

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3KP Series 3KP Transient Voltage Suppressor Diode Series General Information The 3KP series is designed to protect voltage sensitive components from

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RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switching:

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Druckkontaktierter IGBT Press Pack IGBT Technische Information / technical information P3000ZL45X168 Key Parameters VCES IC nom ICRM ISC RthJC F 45

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PAP3050 -30V P-channel enhancement mode MOSFET General Description Features Applications VDS（max） ID (max) Typ.RDS(on) ⚫ Industrial power supplie

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XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYP30N65C3 IXYH30N65C3 VCES = 650V IC110 = 30A V CE(sat)  2

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Description AP30P10P -100V P-Channel Enhancement Mode MOSFET The AP30P10P uses advanced trench technology to provide excellent RDS(ON), low gate cha

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com IP3005 Ultra-high precision built-inMOSFETSingle lithium battery prote

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sales.Mr.wang13826508770 www.sztssd.com AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology t

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P3055LTG-VB P3055LTG-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS =

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TPP30208x 30-V Input, 2-A Synchronous Step-Down Voltage Regulator Features Description • Wide Supply Voltage: 4.5 V to 30 V • Internal Power FET：18

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TPP30208x 30-V Input, 2-A Synchronous Step-Down Voltage Regulator Features Description • Wide Supply Voltage: 4.5 V to 30 V • Internal Power FET：18

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