P8N60 Datasheet | Specifications & PDF Download

FQP8N60C — N-Channel QFET® MOSFET FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω April 2014 Description These N-Channel enhancement mode power

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SLP8N60U / SLF8N60U SLP8N60U/SLF8N60U 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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FQP8N60/FQPF8N60 600V,8A N-Channel MOSFET General Description Product Summary The FQP8N60 & FQPF8N60 have been fabricated using an advanced high vo

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MDP8N60 N-channel MOSFET 600V MDP8N60 N-Channel MOSFET 600V, 8A, 1.0Ω General Description The MDP8N60 uses advanced MagnaChip’s MOSFET Technology, w

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HIGH VOLTAGE N-Channel MOSFET      WFP8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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WFP8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Swit

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SLP8N60C / SLF8N60C SLP8N60C / SLF8N60C 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar st

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SEMICONDUCTOR TECHNICAL DATA KP8N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristic

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improve

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FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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www.DataSheet.in WFP8N60 Silicon N-Channel MOSFET Features � � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Swit

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PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 8A , 600V, RDS(ON)=1.2Ω@VGS=10V, ID=4.0A • • • • • • Low ON Resistance Fast Switch

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FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features • RDS(on) =

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FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100%

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FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% A

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TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 10

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