P8N60 Datasheet | Specifications & PDF Download

* '6 72  *' 6 72 ) ' * 6 VDSS ID VGSS PD TJ Tstg EAS Ciss Coss Crss VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0+] VDS 9,V*6 9 I 0

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FQP8N60C/FQPF8N60C QFET FQP8N60C/FQPF8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors

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FQP8N60C — N-Channel QFET® MOSFET FQP8N60C N-Channel QFET® MOSFET 600 V, 7.5 A, 1.2 Ω April 2014 Description These N-Channel enhancement mode power

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MDP8N60 N-channel MOSFET 600V MDP8N60 N-Channel MOSFET 600V, 8A, 1.0Ω General Description The MDP8N60 uses advanced MagnaChip’s MOSFET Technology, w

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SEMICONDUCTOR TECHNICAL DATA KP8N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristic

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GFP8N60 General Description() These N-Channel enhancement mode power field effect Transistors are produced using planar stripe, DMOS technology. GFP8

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http://www.chinahaiso.com GFP 8N60 GFP 8N60 GFP 8N60 N ， DMOS 。 GFP8N60 、 ，, 。 ，，T=25℃ （） BVDSS ID VGS EAS PD TSTG RθJC VSD 600 7

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.58Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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HFP8N60S Dec 2006 HFP8N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ  ȍ ID = 7.5 A FEATURES ‰ Originative New Design ‰ Superior Avalan

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SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistan

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FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100%

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FQP8N60/FQPF8N60 600V N-Channel MOSFET Features ■ 7.5A,600V,RDS(on)=1.0Ω@VGS=10V ■ Low gate charge ■ Low Crss (typical 23pF) ■ Fast switching ■ 100% A

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TSP8N60M/TSF8N60M 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.2Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 10

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DP8N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS ID 7.0 A VDSS Rdson （@Vgs=10V） 600 V 1.25Ω Qg 32 nC APPLICATIONS  High frequency switching

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www.DataSheet.in WFP8N60 Silicon N-Channel MOSFET Features � � � � � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V Ultra-low Gate charge(Typical 28nC) Fast Swit

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FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET April 2009 UniFETTM FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET, FRFET 600V, 6.5A, 1.35Ω Features • RDS(on) =

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HFP8N60U HFP8N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Ver

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HIGH VOLTAGE N-Channel MOSFET      WFP8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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SLP8N60U / SLF8N60U SLP8N60U/SLF8N60U 600V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stri

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