PC812 PC812 s Features 1. High noise reduction ( .
Toshiba
TPC8129 - Silicon P-Channel MOSFET
MOSFETs Silicon P-Channel MOS (U-MOS) TPC8129 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small foo.
Toshiba
TPC8127 - MOSFET
TPC8127 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8127 Lithium Ion Battery Applications Power Management Switch Applicat.
Toshiba Semiconductor
TPC8122 - Silicon P-Channel MOSFET
TPC8122 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ) TPC8122 Lithium Ion Battery Applications Notebook PC Applications Unit: .
Toshiba
TPC8125 - Silicon P-Channel MOSFET
TPC8125 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8125 Lithium Ion Battery Applications Power Management Switch Applicat.
NXP
LPC812M101JDH16 - 32-bit ARM Cortex-M0+ microcontroller
LPC81xM 32-bit ARM® Cortex®-M0+ microcontroller; up to 16 kB flash and 4 kB SRAM Rev. 4.7 — 19 March 2021 Product data sheet 1. General descriptio.
NXP
LPC812M101JD20 - 32-bit ARM Cortex-M0+ microcontroller
LPC81xM 32-bit ARM® Cortex®-M0+ microcontroller; up to 16 kB flash and 4 kB SRAM Rev. 4.7 — 19 March 2021 Product data sheet 1. General descriptio.
NXP
LPC812M101JDH20 - 32-bit ARM Cortex-M0+ microcontroller
LPC81xM 32-bit ARM® Cortex®-M0+ microcontroller; up to 16 kB flash and 4 kB SRAM Rev. 4.7 — 19 March 2021 Product data sheet 1. General descriptio.
NXP
LPC812M101JTB16 - 32-bit ARM Cortex-M0+ microcontroller
LPC81xM 32-bit ARM® Cortex®-M0+ microcontroller; up to 16 kB flash and 4 kB SRAM Rev. 4.7 — 19 March 2021 Product data sheet 1. General descriptio.
Sharp Electrionic Components
PC812 - High Noise Resistance Type Photocoupler
PC812 PC812 s Features 1. High noise reduction ( Common mode rejection voltage V CM : TYP. 1.5kV at dV/dt = 2kV/ µ s, R L = 470 Ω , V np = 100mV ) 2..
NEC
UPC8120T - VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8119T, µPC8120T VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEP.
NEC
UPC8125GR - 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
SILICON MMIC UPCONVERTER UPC8125GR WITH AGC + IQ MODULATOR FEATURES • WIDE SUPPLY VOLTAGE RANGE: 2.7 to 5.5 V • OUTPUT FREQUENCY RANGE: 1.8 to 2.0 GHz.
NEC
UPC8126GR - 900 MHz BAND DIRECT QUADRATURE MODULATOR IC
Discontinued Product DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8126GR 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICAT.
NEC
UPC8126K - UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8126K 900 MHz BAND DIRECT QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYST.
NEC
UPC8129GR - UP-CONVERTER WITH AGC FUNCTION QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8129GR UP CONVERTER WITH AGC FUNCTION + QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SY.
NEC
UPC8129GR - RF UP-CONVERTER WITH AGC FUNCTION + IF QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SYSTEMS
DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8129GR UP CONVERTER WITH AGC FUNCTION + QUADRATURE MODULATOR IC FOR DIGITAL MOBILE COMMUNICATION SY.
ETC
UPC812G2 - Operational Amplifier
w w a t a D . w e h S UPC812G2 m IL00 o ********** c . OPERATIONAL AMPLIFIER (J FET INPUT) U 4 -TOP VIEWet 1 2 3 VEE 4 ( –5 to –16V) – + + – VCC (.
NEC
UPC812 - Dual J-FET Input Low Offset Operational Amplifier
w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c .
