PMX Datasheet | Specifications & PDF Download

Section I. MAX II Device Family Data Sheet This section provides designers with the data sheet specifications for MAX® II devices. The chapters conta

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PMXB360ENEA 80 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (

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Section I. MAX II Device Family Data Sheet This section provides designers with the data sheet specifications for MAX® II devices. The chapters conta

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Section I. MAX II Device Family Data Sheet This section provides designers with the data sheet specifications for MAX® II devices. The chapters conta

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www.DataSheet4U.com Agilent HPMX-7102 Dual-Band, Tri-Mode Downconverter Data Sheet Features • Wide band operation RF inputs: Cellular AMPS/CDMA: 869

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Section I. MAX II Device Family Data Sheet This section provides designers with the data sheet specifications for MAX® II devices. The chapters conta

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DF N1 01 PMXB120EPE 24 September 2013 0D -3 30 V, P-channel Trench MOSFET Product data sheet 1. General description P-channel enhancement mode Fi

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Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm

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IF Modulator/Demodulator IC Technical Data HPMX-5002 Features • Use with HPMX-5001 Up/Down Converter Chip for DECT Telephone Applications • 2.7– 5.5

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6 Specifications APM Series FEATURES Compact Proximity Sensors Compact Proximity Sensors Can be Installed Anywhere. Locking Boss Ensures Easy Mount

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PMX100UNE 20 V, N-channel Trench MOSFET 18 May 2022 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FE

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1.5 – 2.5 GHz Upconverter/ Downconverter Technical Data HPMX-5001 Features • 2.7 V Single Supply Voltage • Low Power Consumption (60␣ mA in Transmit

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www.DataSheet4U.com PMX Surface Mount Crystals 5.0 x 7.0 x 1.2 mm MtronPTI reserves the right to make changes to the product(s) and service(s) descr

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PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transis

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PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transist

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PMXB65ENE 30 V, N-channel Trench MOSFET 3 November 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor

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1.5 – 2.5 GHz LNA Switch PA Technical Data HPMX-3003 YY3H0WP0W3MX Features • GaAs MMIC LNA-SwitchPower Amp for 1.5 – 2.5 GHz Transceiver Use • LNA:

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Silicon Bipolar RFIC 100 MHz Vector Modulator Technical Data HPMX-2005 Features • 25 - 250 MHz Output Frequency • -5 dBm Peak Pout • Unbalanced 50 Ω

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