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PMXB120EPE P-Channel MOSFET

PMXB120EPE Description

PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1.General .
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.

PMXB120EPE Features

* Trench MOSFET technology
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection 1 kV HBM
* Drain-source on-state resistance RDSon = 100 mΩ

PMXB120EPE Applications

* High-side load switch and charging switch for portable devices
* Power management in battery driven portables
* LED driver
* DC-to-DC converter 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source volt

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