Description
PMXB360ENEA 80 V, N-channel Trench MOSFET 5 July 2018 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.
Features
* Logic-level compatible
* Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Tin-plated 100 % solderable side pads for optical solder inspection
* ElectroStatic Discharge (ESD) protection > 2 kV HBM
* AEC-Q101 qualified
3. Applica
Applications
* Relay driver
* Power management in automotive and industrial applications
* LED driver
* DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static charac