Description
PMXB40UNE 12 V, N-channel Trench MOSFET 27 September 2013 Product data sheet 1.General .
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package u.
Features
* Trench MOSFET technology
* Leadless ultra small and thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
* Exposed drain pad for excellent thermal conduction
* ElectroStatic Discharge (ESD) protection 1 kV
* Very low Drain-Source on-state resistance RDSon = 34 mΩ
Applications
* 3. Applications
* Low-side load switch and charging switch for portable devices
* Power management in battery-driven portables
* LED driver
* DC-to-DC converters
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS