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HT8691 Class D Audio Amplifier 5.5W Anti-Clipping Mono Class D Audio Amplifier with Boost Converter  FEATURE ・Anti-Clipping Function (ACF) ・Filter-

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Stepping Motors 60 mm sq. (2.36 inch sq.) 1.8 /step RoHS Bipolar winding, Connector type Bipolar winding, Lead wire type Dimensions for attaching NE

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50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avala

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MIX3901 2X6W F MIX3901、2X6W F。 MIX3901PSRR MIX3901RF。 ， 。PWM 、PCB, 。， 。， MIX3901 。  D： －6.2W (PVDD=7.0V, RL =4 Ω，THD+N=10%)  F： －5.7W (VDD=7

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B-Box RCP  3.0 Rapid prototyping controller The B-Box RCP accelerates the development and experimental validation of converter control techniques in a

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HT8692 Class D Audio Amplifier with Boost Converter 8.0W Anti-Clipping Mono Class D Audio Amplifier with Boost Converter  FEATURE ・Anti-Clipping F

(145 views)

7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% aval

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7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% avala

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PJM10H10NTE N-Channel Enhancement Mode Power MOSFET Features ⚫ Excellent package for good heat dissipation ⚫ High density cell design for ultra low R

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HT8698 Class D Audio Amplifier 4.75W Anti-Clipping Stereo Class D Audio Amplifier with Boost Converter  FEATURE ・Anti-Clipping Function (ACF) ・Filt

(113 views)

GBU2006 THRU GBU2010 GBU2006 THRU GBU2010 SINGLE PHASE20.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS FEATURE GBU .UL Listed Under Recognized Compone

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04D02SPN PESD5V5V1BCSP Extremely low clamping bidirectional ESD protection diode 13 August 2025 Short data sheet 1. General description Extremely

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GBU2006 THRU GBU2010 GBU2006 THRU GBU2010 SINGLE PHASE20.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS FEATURE GBU .UL Listed Under Recognized Compone

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PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS=

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GBU2006 THRU GBU2010 GBU2006 THRU GBU2010 SINGLE PHASE20.0AMPS.GLASS PASSIVATED BRIDGE RECTIFIERS FEATURE GBU .UL Listed Under Recognized Compone

(96 views)

10N65(F,B,H) 10A mps,650 Volts N-CHANNEL MOSFET FEATURE  10A,650V,RDS(ON)=0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100% av

(93 views)

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% av

(83 views)

11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss

(83 views)