PnP Datasheet | Specifications & PDF Download

isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Max

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PNP Power Transistor Complementary Silicon Plastic Power Transistors Features: Designed for use in general purpose power amplifier and switching appl

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Назначение КТ837 биполярный эпитаксиально-планарный p-n-p транзистор Предназначен для применения в схемах переключения, выходных каскадах низкочасто

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Shenzhen Jingdao Electronic Co.,Ltd. B647 PNP Power Transistor *Applications ： ◆ Electronical Ballasts for fluorescent lighting ◆ Charger and Switch

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Ordering number:EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications · Suitable for use

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TO-92 Plastic-Encapsulate Transistors 2SA1273 TRANSISTOR (PNP) FEATURES Complementary to KTC3205. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) S

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1441 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(

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2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ

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A Product Line of Diodes Incorporated Green FCX555 150V PNP HIGH VOLTAGE SWITCHING TRANSISTOR IN SOT89 Features • BVCEO > -150V • BVCEV > -180V • IC

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FJNS4202R FJNS4202R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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TOSHIBA Discrete Semiconductors Transistor Silicon PNP Epitaxial Type (PCT Process) For General Purpose Switching and Amplifier Applications Featur

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PNP Transistors 9015 Features Complementary to KST9014 +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3

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isc Silicon PNP Power Transistor 2SB1370 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A ·Good Linearity of hFE ·Wide

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2SA1020 One Watt High Current PNP Transistor Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Vo

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