Pnp Datasheet | Specifications & PDF Download

ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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2SB772 PNP medium power transistor Features ■ High current ■ Low saturation voltage ■ Complement to 2SD882 Applications ■ Voltage regulation ■ Relay

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A733 PNP Epitaxial Silicon Transistor LOW FREQUENCY AMPLIFIER Collector-Emitter Voltage: VCEO=-50V Collector Dissipation: PC(max)=250mW Absolute Max

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PNP Power Transistor Complementary Silicon Plastic Power Transistors Features: Designed for use in general purpose power amplifier and switching appl

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SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB688 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD718 APP

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TO-92 Plastic-Encapsulate Transistors 2SA1273 TRANSISTOR (PNP) FEATURES Complementary to KTC3205. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) S

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NJW0281G (NPN) NJW0302G (PNP) Complementary NPN-PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular NJ

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2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applica

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Silicon Epitaxial Planar Transistor EATURES  Collector Current.(IC= 1.5A）  Complementary To SS8050. Pb Lead-free  Collector Dissipation: PC=0.3W

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FJNS4202R FJNS4202R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias R

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isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) ·NPN complement to Type 2N3904. ·Minimum Lot-to-Lot

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2N2212 (GERMANIUM) PNP GERMANIUM POWER TRANSISTORS · .. designed for high-current SllVitching applications requiring low saturation voltages. short S

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Ordering number:EN2209C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB1223/2SD1825 Driver Applications Applications · Suitable for use

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isc Silicon PNP Power Transistor DESCRIPTION ·Low voltage( max .40V ) ·Low current ( max .200mA ) APPLICATIONS ·Designed for high-speed switching ·Am

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isc Silicon PNP Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A

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isc Silicon PNP Darlington Power Transistor 2SB1223 DESCRIPTION ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) ·Large Current Capabili

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.62

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Shenzhen Jingdao Electronic Co.,Ltd. B647 PNP Power Transistor *Applications ： ◆ Electronical Ballasts for fluorescent lighting ◆ Charger and Switch

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isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

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Elektronische Bauelemente KTA1023 -0.8A , -120V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead

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