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FQP50N06 - 60V N-Channel MOSFET
FQP50N06 QFET FQP50N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fa.FQP55N06 - 60V N-Channel MOSFET
FQP55N06 May 2001 QFET FQP55N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produce.FQP55N10 - 100V N-Channel MOSFET
FQP55N10 — N-Channel QFET® MOSFET FQP55N10 N-Channel QFET® MOSFET 100 V, 55 A, 26 mΩ Description This N-Channel enhancement mode power MOSFET is prod.FQP5N60C - 600V N-Channel MOSFET
FQP5N60C/FQPF5N60C QFET FQP5N60C/FQPF5N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors .FQP50N06L - N-Channel MOSFET
FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is p.FQP50N06L - 60V LOGIC N-Channel MOSFET
FQP50N06L — N-Channel QFET® MOSFET FQP50N06L N-Channel QFET® MOSFET 60 V, 52.4 A, 21 mΩ Description This N-Channel enhancement mode power MOSFET is p.FQP5N50C - 500V N-Channel MOSFET
FQP5N50C/FQPF5N50C QFET FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors .FQP5N60 - 600V N-Channel MOSFET
FQP5N60 April 2000 QFET FQP5N60 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produc.FQP5N30 - 300V N-Channel MOSFET
QFET % % % % % % & '()**+,-* .Ω/+-0*+ 1 2 . 3 4 12 . &.FQP5N80 - 800V N-Channel MOSFET
FQP5N80 September 2000 QFET FQP5N80 800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.LQP55Hxxxxxxxx - Chip Coils
!Note Please read rating and !CAUTION (for storage, operating, rating, soldering, mounting and handling) in this PDF catalog to prevent smoking and/or.FQP50N06 - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :.FQP50N06L - N-Channel MOSFET
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance :.FQP58N08 - 80V N-Channel MOSFET
FQP58N08 December 2000 QFET FQP58N08 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are pr.FQP5N20L - 200V LOGIC N-Channel MOSFET
FQP5N20L August 2001 QFET FQP5N20L 200V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors a.FQP5N40 - 400V N-Channel MOSFET
QFET $ $ $ $ $ $ % &'%(()*+, -Ω.)+,() / 0 ,( 1 /0 2.FQP5P10 - 100V P-Channel MOSFET
FQP5P10 QFET FQP5P10 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using Fai.FQP50N06 - N-Channel Power MOSFET
FQP50N06 ® FQP50N06 Pb Pb Free Plating Product 50A,60V Heatsink Planar N-Channel Power MOSFET Features • 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V .P5N80 - FQP5N80
FQP5N80 FQP5N80 800V N-Channel MOSFET September 2000 QFETTM General Description These N-Channel enhancement mode power field effect transistors are.