RU30 Datasheet | Specifications & PDF Download

RU3080M N-Channel Advanced Power MOSFET Features • 30V/80A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design

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RU30P4C6 P-Channel Advanced Power MOSFET Features • -30V/-4A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =75mΩ(Typ.)@VGS=-4.5V • Low On-Resistance • Supe

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Data Sheet No. PD94140 IRU3004 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK CONTROLLER IC WITH DUAL LDO CONTROLLER FEATURES Meets latest VRM 8.4 specificatio

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RU30L30M P-Channel Advanced Power MOSFET MOSFET Features • -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.5V • Super High Dense

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RU30105L N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res

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Data Sheet No. PD94145 IRU3021M 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK PLUS TRIPLE LDO CONTROLLER DESCRIPTION The IRU3021M controller IC is specifically

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) m oc .U 4 t eeh S ata D.w w w : t eeh S ata D ( Data Sheet No. PD94173 IRU3037 / IRU3037A 8-PIN SYNCHRONOUS PWM CONTROLLER FEATURES Synchronous C

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)m o cU .4te e h S atD aw . : te e h S atD a( Data Sheet No. PD94649 IRU3039 SYNCHRONOUS PWM CONTROLLER WITH OVER CURRENT PROTECTION FEATURES Curren

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Data Sheet No. PD94148 revA IRU3034 & (PbF) 8-PIN PWM SWITCHER CONTROLLER IC WITH CURRENT LIMITING DESCRIPTION The IRU3034 IC provides a low cost swi

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RU3070L N-Channel Advanced Power MOSFET Features • 30V/70A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V RDS (ON) =5mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design

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RU30E4B-VB RU30E4B-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at V

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RU3091M N-Channel Advanced Power MOSFET Features • 30V/90A, RDS (ON) =2.8mΩ(Typ.)@VGS=10V RDS (ON) =3.4mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Desi

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RU3081L N-Channel Advanced Power MOSFET MOSFET Features • 30V/90A, RDS (ON) =2.6 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense

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RU3081R N-Channel Advanced Power MOSFET MOSFET Features • 30V/100A, RDS (ON) =3 mΩ(Typ.)@VGS=10V RDS (ON) =4.3 mΩ(Typ.)@VGS=4.5V • Super High Dense C

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RU3050L N-Channel Advanced Power MOSFET MOSFET Features • 30V/55A, RDS (ON) =7 mΩ(Typ.)@VGS=10V RDS (ON) =12 mΩ(Typ.)@VGS=4.5V • Super High Dense Cel

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RU30291R N-Channel Advanced Power MOSFET MOSFET Features • 30V/290A, RDS (ON) =1.8mΩ(Typ.)@VGS=10V RDS (ON) =2.6mΩ(Typ.)@VGS=4.5V • Super High Dense

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RU3065L N-Channel Advanced Power MOSFET MOSFET Features • 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V • Super High Dense Cell

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