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LP3667 LP3667  BJT， 5W PSR ，。 LP3667 ， ； FB 。 ，LP3667  ，  75mW  ，  FB  ，  ，， FB ，  ； VCC 。 LP3667 ， ；，LP3667  VCC 

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DM74LS73A Dual Negative-Edge-Triggered Master-Slave J-K Flip-Flops with Clear and Complementary Outputs August 1986 Revised March 2000 DM74LS73A Dua

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Photocoupler K101 • K102 • K104 These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a cha

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L-34F3C T-1 (3mm) Infrared Emitting Diode DESCRIPTION F3 Made with Gallium Arsenide Infrared Emitting diodes PACKAGE DIMENSIONS FEATURES Mechanical

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T-1 (3mm) INFRARED EMITTING DIODE Part Number: L-34SF4BT Features  Mechanically and spectrally matched to the phototransistor.  RoHS compliant. De

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GaAs-Infrarot-Lumineszenzdiode (950 nm, 300 µm Kantenlänge) GaAs Infrared Emitting Diode(950 nm, 12 mil) F 0118J Vorläufige Daten / Preliminary data

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L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis

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T-1 (3mm) INFRARED EMITTING DIODE Part Number: L-34F3BT Features z Mechanically and spectrally matched to the phototransistor. z RoHS compliant. Des

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SN54/74LS73A DUAL JK NEGATIVE EDGE-TRIGGERED FLIP-FLOP The SN54LS / 74LS73A offers individual J, K, clear, and clock inputs. These dual flip-flops are

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T-1 (3mm) INFRARED EMITTING DIODE Part Number: L-34SF4C Features z Mechanically and spectrally matched to the phototransistor. z RoHS compliant. Des

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Ф3MM / 8×8 /1.1 INCH (28MM) SUPER RED DOT MATRIX A-1088BS FEATURES ※ 1.1 inch (28.0mm) matrix height. ※ Low power requirement, solid state reliability

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T-1 3/4 (5mm) INFRA-RED EMITTING DIODE L-53SF7BT Features MECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. BOTH WATER CLEAR LENS

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U. R L. O 1639 EC #E7 Fi le I GN ZE D TO-220 Isolated MT2 MT1 T Internally Triggered Triacs (4 A to 15 A) E3 General Description Teccor’s Q

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GaAs-Infrarot-Lumineszenzdiode (950 nm, Enhanced Power) GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary

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L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis

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T-1 3/4 (5mm) INFRA-RED EMITTING DIODE L-53SF6C Features MECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. BOTH WATER CLEAR LENS

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Production February 2003 ® P2779A Low-Cost Notebook EMI Reduction IC Features • • • • • • Provides up to 15 dB of EMI suppression FCC approved meth

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G081PU25W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 5 W • Typical 808 nm Emission Wavelength • High Re

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L-31XXIR1XX 3.0mm INFRARED EMITTING DIODE ◆PACKAGE DIMENSIONS ◆ABSOLUTE MAXIMUN RATING: (Ta=25℃) Part No. L-31XXIR1XX PARAMETER PD（mw） 100 Power Dis

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G081PU1750M TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 750 mW • Typical 808 nm Emission Wavelength • Hi

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