S-8330 Datasheet | Specifications & PDF Download

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Features nn 3V to 40V Input Voltage Range nn Ultralow Quiescent Current and Low Ripple Burst Mode® Operation: IQ = 6µA nn 1A, 60V Power Switch nn Posi

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SSC8330GQ4 Dual Asymmetric N-Channel Enhancement Mode MOSFET  Features  Applications  Load Switch VDS VGS RDSon TYP ID  Isolated DC/DC Con

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Freescale Semiconductor, Inc. www.DataSheet4U.com Freescale Semiconductor, Inc For More Information On This Product, Go to: www.freescale.com F

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PE8330M N-Channel Enhancement Mode Power MOSFET Description The PE8330M uses advanced trench technology to provide excellent RDS(ON) and low gate cha

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Freescale Semiconductor, Inc. www.DataSheet4U.com Freescale Semiconductor, Inc For More Information On This Product, Go to: www.freescale.com F

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LM8330 www.ti.com SNVS839A – JUNE 2012 – REVISED MARCH 2013 LM8330 I2C-Compatible Keypad Controller with GPIO, PWM, and IEC61000 ESD Protection Ch

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www.DataSheet4U.com RoHS Compliant MASW-008330 V1 Functional Schematic GaAs SP3T 2.5 V Switch DC - 3.0 GHz Features • • • • • • • • Low Voltage Oper

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MASW-008330 GVaAs SP3T 2.5 V Switch DC - 3.0 GHz Features  Low Voltage Operation: 2.5V  Low Insertion Loss: 0.3 dB at 1 GHz  0.5 micron GaAs PHEMT

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Data Sheet FEATURES Fully differential signal path, also used with single-sided signals Inputs from 0.3 mV to 1 V rms, rail-to-rail outputs Differenti

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Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply K A 0.625 I Features • Extremely low noise voltage caus

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IRFHM8330PbF VDSS VGS max RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) Qg (typical) ID (@TC (Bottom) = 25°C) 30 ±20 6.6 9.9 9.3 25 nC A V V m   D 5

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Datasheet Values Refer to PCN-OPT-1288-2023 www.vishay.com TSOP181.., TSOP183.., TSOP185.. Vishay Semiconductors IR Receiver Modules for Remote Con

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Zener Diodes MAZ8000 Series Silicon planar type Unit : mm For stabilization of power supply K A 0.625 I Features • Extremely low noise voltage caus

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IRFH8330PbF VDS VGS max 30 ± 20 6.6 9.9 9.3 25 V V mΩ nC A HEXFET® Power MOSFET RDS(on) max (@VGS = 10V) (@VGS = 4.5V) Qg typ. ID (@Tc(Bottom) =

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M78xx05 Series WIDE INPUT NON-ISOLATED SWITCHING REGULATOR VERY LOW PROFILE SIP-3 PACKAGE REGULATED SINGLE OUTPUT FEATURES ● Efficiency Up To 96% ● N

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MSC83301 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED VSWR CAPAB

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MSC83303 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY

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