S1T Datasheet | Specifications & PDF Download

SPEC No. LC00307 MODEL No. LM100SS1T522 PAGE 1 Precautions 1) Industrial(Mechanical) design of the product in which this LCD module will be incor

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HYG015N10NS1TA Feature  100V/380A RDS(ON)=1.2 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH

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MULTI-INNO TECHNOLOGY CO., LTD. www.multi-inno.com LCD MODULE SPECIFICATION Model : MI0240S1T This module uses ROHS material For Customer's Acceptanc

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w w w .D t a S a e h t e . U 4 m o c w w w .D a t a e h S 4 t e U m o .c RECORDS OF REVISION DOC. FIRST ISSUE JUN.6.2000 CHECK AND

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HYG011N04LS1TA Feature  40V/320A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V RDS(ON)=1.3 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Halog

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HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS

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1 CHIP CLP SUBSYSTEM IC S1T8527C INTRODUCTION S1T8527C is a monolithic circuit which can be used in high performance 60MHz MCA type CLP System. The

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Anti-Sulfurated Thick Film Chip Resistors Anti-Sulfurated Thick Film Chip Resistors ERJ S : 0402, 0603, 0805, 1206, 1210, 1812, 2010, 2512 ERJ S6 : 0

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Version : Preliminary PA079DS1T1 TECHNICAL SPECIFICATION Customer’s Confirmation Date By m o c . Date : FEB. 02,2000 U 4 t e This technical spec

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HYG012N08NS1TA Feature  80V/420A RDS(ON)=0.9 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS

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w w w . D a t a S h e e t 4 U . c o m New Product LM121SS1T53 Features s 31 cm [12.1 ] SVGA format s Less shadowing utilizing SA* technology s Fast

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Global LCD Panel Exchange Center www.panelook.com One step solution for LCD / PDP / OLED panel application: Datasheet, inventory and accessory www.

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RS1T34 1-Bit Dual-Supply Unidirectional Bus Transceiver 1 FEATURES • Power-Supply Range: VCCA and VCCB: 1.65V to 5.5V • VCC Isolation: If Either VCC

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ENHANCED-1 CHIP CT0 RF IC S1T8528 INTRODUCTION S1T8528 is a 1 CHIP RF IC which can be used in high performance CTO CLP systems at max. 60MHz. S1T852

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Silicon ESD protection device LXESxxB series Document No. LX–1-1122 Rev1.0 1. Application This specification shall be applied to the ESD Protection D

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HYG017N10NS1TA Feature  100V/330A RDS(ON)=1.6mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS

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HYG016N10NS1TA N-Channel Enhancement Mode MOSFET Feature  100V/370A RDS(ON)=1.35mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged 

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HYG006N04LS1TA Feature  40V/600A RDS(ON)=0.45 mΩ(typ.)@VGS = 10V RDS(ON)=0.61 mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Hal

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www.DataSheet.co.kr LXES1TBBB2-004 1. Application  ESD Protection 2. Features IEC61000-4-2(ESD) ±15kV(air), ±12kV(contact) Low capacitance：0.55pF

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www.DataSheet.co.kr VLMW41 - Vishay Semiconductors Standard SMD LED PLCC-2 FEATURES • High efficient InGaN technology • Very narrow chromatic

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