S2301 Datasheet | Specifications & PDF Download

P-Channel 20 V (D-S) MOSFET DTS2301 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V ID (A) Configur

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P-Channel 20 V (D-S) MOSFET DTS2301S www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V ID (A) Configu

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September 30, 2009 Datasheet No – PD 97421 IRS2301S HIGH AND LOW SIDE DRIVER Features • • • • • • • • • • Product Summary 600V Max 5V – 20V 120mA /

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www.DataSheet4U.com Sept 8, 2009 Automotive Grade AUIRS2301S HIGH AND LOW SIDE DRIVER Features • • • • • • • • • • • Product Summary 600V Max 5V –

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Segment Digit LED Display 1.9 Common Anode 2.3 Inch (57.0mm) PRODUCT DESCRIPTION (1) 2.3 Inch (56.80mm) Digit Height (2) Low current operation (3) Ex

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Segment Digit LED Display 1.9 Common Anode 2.3 Inch (57.0mm) PRODUCT DESCRIPTION (1) 2.3 Inch (56.80mm) Digit Height (2) Low current operation (3) Ex

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Segment Digit LED Display 1.9 Common Anode 2.3 Inch (57.0mm) PRODUCT DESCRIPTION (1) 2.3 Inch (56.80mm) Digit Height (2) Low current operation (3) Ex

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Segment Digit LED Display 1.9 Common Anode 2.3 Inch (57.0mm) PRODUCT DESCRIPTION (1) 2.3 Inch (56.80mm) Digit Height (2) Low current operation (3) Ex

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CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS(ON) = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. High den

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Segment Digit LED Display 1.9 Common Anode 2.3 Inch (57.0mm) PRODUCT DESCRIPTION (1) 2.3 Inch (56.80mm) Digit Height (2) Low current operation (3) Ex

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Elektronische Bauelemente SMS2301-C -3.1A, -20V, RDS(ON) 75m P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif

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www.ti.com TPS2300 TPS2301 SLVS265H – FEBRUARY 2000 – REVISED JULY 2013 DUAL HOT-SWAP POWER CONTROLLERS WITH INDEPENDENT CIRCUIT BREAKER AND POWER-G

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P-Channel 0-V (D-S) MOSFET DTS2301B www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V RDS(on) () at VGS = - 2.5 V ID (A) Configu

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S2301 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 80mW 40A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching spee

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P-Channel SMD MOSFET FMS2301 Formosa MS List List 1

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CS2301 P-Channel Trench Power MOSFET General Description The CS2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge an

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Features ♦Ron(typ.)=95 mΩ ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, RoHS Compliant VS2301BC -20V/-1.8A P-Channel Ad

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Elektronische Bauelemente SMS2301 -3.1A , -20V , RDS(ON) 75mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specif

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VS2301BC-A -20V/-3A P-Channel Advanced Power MOSFET Features  P-Channel  Enhancement mode  Fast Switching  Pb-free lead plating; RoHS compliant;

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