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S3N Datasheet, Features, Application

S3N General-Purpose Rectifiers

General-Purpose Rectifiers S3A-S3N Features • L.

CR Micro
rating-1 17

CS3N20A23H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N20 A23H General Description: VDSS 200 CS3N20 A23H, the silicon N-channel Enhanced ID 3 VDMOSFETs, is ob.
STMicroelectronics
rating-1 16

3NV04D - VNS3NV04D

® VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE RDS(on) VNS3NV04D 120 mΩ (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device .
CR Micro
rating-1 16

CS3N20A3H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N20 A3H General Description: CS3N20 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
CR Micro
rating-1 16

CS3N80A4RZ-G - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N80 A4RZ-G General Description: CS3N80 A4RZ-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the .
Fairchild Semiconductor
rating-1 15

HGT1S3N60C3D - 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging .
CR Micro
rating-1 15

CS3N30B23H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N30 B23H General Description: VDSS 300 V CS3N30 B23H, the silicon N-channel Enhanced ID 3 A VDMOSFETs, .
CR Micro
rating-1 15

CS3N20A4H - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N20 A4H General Description: CS3N20 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a.
CR Micro
rating-1 14

CS3N06AE-G - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N06 AE-G General Description: CS3N06 AE-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high d.
CR Micro
rating-1 14

CS3N06AS1-G - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N06 AS1-G General Description: CS3N06 AS1-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the high .
CR Micro
rating-1 14

CS3N06AS-G - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N06 AS-G General Description: CS3N06 AS-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high.
CR Micro
rating-1 14

CS3N80A3H1-G - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET ○R CS3N80 A3H1-G General Description: CS3N80 A3H1-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the s.
STMicroelectronics
rating-1 13

VNS3NV04DP-E - Automotive OMNIFET II fully autoprotected Power MOSFET

VNS3NV04DP-E Automotive OMNIFET II fully autoprotected Power MOSFET Datasheet - production data SO-8  Linear current limitation  Thermal shutdow.
STMicroelectronics
rating-1 10

VNS3NV04P-E - fully autoprotected Power MOSFET

Features VNN3NV04P-E VNS3NV04P-E OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Type VNN3NV04P-E VNS3NV04P-E RDS(on) 120 m.
Fairchild Semiconductor
rating-1 9

HGT1S3N60C3DS - 6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes

S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes Packaging .
STMicroelectronics
rating-1 9

VNS3NV04D - FULLY AUTOPROTECTED POWER MOSFET

® VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE RDS(on) VNS3NV04D 120 mΩ (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device .
HUAJING MICROELECTRONICS
rating-1 8

CS3N80FA9 - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N80F A9 ○R General Description: CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig.
Littelfuse
rating-1 7

P0080S3NLRP - Thyristors

Pxxx0S3N Series High Surge Current SIDACtor® - DO214AB SIDACtor® Protection Thyristors Datasheet Agency Agency Approvals Agency File Number E133083.
Huajing Microelectronics
rating-1 6

CS3N80A3 - Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET CS3N80 A3 ○R General Description: CS3N80 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne.
JILIN SINO-MICROELECTRONICS
rating-1 6

JCS3N25RT - N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS3N25T MAIN CHARACTERISTICS Package ID 3 A VDSS 250 V Rdson(@Vgs=10V) 1.74Ω Qg 4.4 nC z z z UPS APPLICATIONS z High.
ON Semiconductor
rating-1 5

S3N - General-Purpose Rectifiers

General-Purpose Rectifiers S3A-S3N Features • Low−Profile Package • Glass−Passivated Junction • UL Flammability Classification: 94V−0 • UL Certified,.
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