S3N Datasheet | Specifications & PDF Download

Pxxx0S3N Series High Surge Current SIDACtor® - DO214AB SIDACtor® Protection Thyristors Datasheet Agency Agency Approvals Agency File Number E133083

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Silicon N-Channel Power MOSFET ○R CS3N20 A23H General Description： VDSS 200 CS3N20 A23H, the silicon N-channel Enhanced ID 3 VDMOSFETs, is ob

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Features VNN3NV04P-E VNS3NV04P-E OMNIFET II fully autoprotected Power MOSFET Datasheet − production data Type VNN3NV04P-E VNS3NV04P-E RDS(on) 120 m

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Silicon N-Channel Power MOSFET ○R CS3N80 A4R General Description： CS3N80 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Pxxx0S3N Series High Surge Current SIDACtor® - DO214AB SIDACtor® Protection Thyristors Datasheet Agency Agency Approvals Agency File Number E133083

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Pxxx0S3N Series High Surge Current SIDACtor® - DO214AB SIDACtor® Protection Thyristors Datasheet Agency Agency Approvals Agency File Number E133083

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Silicon N-Channel Power MOSFET ○R CS3N150F A9R General Description： CS3N150F A9R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the se

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LH28F320S3NS, Reliability Test Report

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Silicon N-Channel Power MOSFET ○R CS3N80F A9 General Description： VDSS 800 CS3N80F A9, the silicon N-channel Enhanced VDMOSFETs, ID 3 is obtai

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Silicon N-Channel Power MOSFET ○R CS3N150 AKR General Description： CS3N150 AKR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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Silicon N-Channel Power MOSFET ○R CS3N90 A4R General Description： CS3N90 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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VNN3NV04, VNS3NV04 VND3NV04, VND3NV04-1 OMNIFET II fully autoprotected Power MOSFET Features Type VNN3NV04 VNS3NV04 VND3NV04 VND3NV04-1 RDS(on) 120

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® VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE RDS(on) VNS3NV04D 120 mΩ (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device

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N R N-CHANNEL MOSFET JCS3N25T MAIN CHARACTERISTICS Package ID 3 A VDSS 250 V Rdson（@Vgs=10V） 1.74Ω Qg 4.4 nC z z z UPS APPLICATIONS z High

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Silicon N-Channel Power MOSFET ○R CS3N120 A8R General Description： CS3N120 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self

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® VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE RDS(on) VNS3NV04D 120 mΩ (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each devic

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Silicon N-Channel Power MOSFET CS3N80 A4 ○R General Description： CS3N80 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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Silicon N-Channel Power MOSFET ○R CS3N150 AHR General Description： CS3N150 AHR, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-a

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Silicon N-Channel Power MOSFET CS3N90 A8 ○R General Description： CS3N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligne

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