S4G Datasheet | Specifications & PDF Download

Production specification Silicon Bridge Rectifiers FEATURES z Rating to 1000V PRV z Surge overload rating to 120 Amperes peak z Reliable low cost con

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APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8

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M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-

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APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27(U_S)4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8

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Features ‹ Low forward voltage drop ‹ High current capability ‹ High reliability ‹ High surge current capability 1S1G thru 1S9G Glass Passivated Supe

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16GB, 32GB (x72, ECC, QR) 240-Pin DDR3L 1.35V LRDIMM Features DDR3L 1.35V SDRAM LRDIMM MT72KSZS2G72LZ – 16GB MT72KSZS4G72LZ – 32GB Features • 240-pin

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S4A - S4M Taiwan Semiconductor 4A, 50V - 1000V Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● L

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1S2G THRU 1S4G ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE: 200 TO 400V CURRENT: 0.7A FEATURE R-1 Molded case feature for auto inser

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16GB, 32GB (x72, ECC, QR) 240-Pin DDR3L 1.35V LRDIMM Features DDR3L 1.35V SDRAM LRDIMM MT72KSZS2G72LZ – 16GB MT72KSZS4G72LZ – 32GB Features • 240-pin

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32GB (x72, ECC, QR) 240-Pin DDR3 LRDIMM Features DDR3 SDRAM LRDIMM MT72JSZS4G72LZ – 32GB Features • 240-pin, load-reduced dual in-line memory module

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16GB, 32GB (x72, ECC, QR) 240-Pin DDR3L 1.35V LRDIMM Features DDR3L 1.35V SDRAM LRDIMM MT72KSZS2G72LZ – 16GB MT72KSZS4G72LZ – 32GB Features • 240-pin

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