Ordering number:EN2585B SB10-18 Schottky Barrier .
2SB1018 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-220Fa package ·Low sat.B1018 - 2SB1018
SavantIC Semiconductor www.DataSheet4U.com Product Specification www.DataSheet4U.com Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-2.2SB1018 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Com.2SB1018 - SILICON PNP TRANSISTOR
: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES . High Coll.SB10-18 - 80V/ 1A Rectifier
Ordering number:EN2585B SB10-18 Schottky Barrier Diode (Twin Type · Cathode Common) 80V, 1A Rectifier Applications · High frequency rectification (s.SB10-18K - 180V/ 1A Rectifier
Ordering number:EN2835B SB10-18K Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 1A Rectifier Applications · High frequency rectification .SB100-18 - 180V/ 10A Rectifier
Ordering number :EN2580A SB100-18 Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 10A Rectifier Applications · High frequency rectificatio.2SB1018A - TRANSISTOR
www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Am.2SB1018A - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1018A DESCRIPTION ·With TO-220F package ·High co.B1018A - 2SB1018A
www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power .2SB1018A - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Com.