SB10-18 Datasheet | Specifications & PDF Download

SavantIC Semiconductor www.DataSheet4U.com Product Specification www.DataSheet4U.com Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-2

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www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Com

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1018A DESCRIPTION ·With TO-220F package ·High co

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: SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. Unit in mm POWER AMPLIFIER APPLICATIONS. FEATURES . High Coll

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www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Am

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1018 DESCRIPTION ·With TO-220Fa package ·Low sat

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Ordering number:EN2585B SB10-18 Schottky Barrier Diode (Twin Type · Cathode Common) 80V, 1A Rectifier Applications · High frequency rectification (s

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Ordering number:EN2835B SB10-18K Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 1A Rectifier Applications · High frequency rectification

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Com

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Ordering number :EN2580A SB100-18 Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 10A Rectifier Applications · High frequency rectificatio

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