SC470 Datasheet | Specifications & PDF Download

2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC

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www.datasheet4u.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4706 DESCRIPTION ·With TO-3PN package ·High vol

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isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4703 DESCRIPTION ·Low Distortion at Low Supply Voltage. IM2- 55 dB TYP., IM3- 76 dB TYP. @VC

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Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications

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isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V(Min) ·High Switching Speed ·High Reliability

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Ordering number:EN3687 NPN Triple Diffused Planar Silicon Transistor 2SC4709 High-Voltage Amplifier, High-Voltage Switching Applications Features ·

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NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESC

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2SC4704 Silicon NPN Epitaxial High Frequency Amplifier Feature • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low out

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2SC4706 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC

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2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outli

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DATA SHEET SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is des

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Synchronous Buck Controller for Dynamic Load-Voltage Applications POWER MANAGEMENT Description The SC470 is a single output, constant on-time synchron

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SMD Type Silicon NPN Epitaxial 2SC4702 SOT-23 Transistors Unit: mm Features High breakdown voltage +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Small C

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2SC4702 Silicon NPN Epitaxial Application High voltage amplifier Features • High breakdown voltage VCEO = 300 V • Small Cob Cob = 1.5 pF Typ. Outline

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SMD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC4705 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter satur

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Ordering number:EN3484 NPN Epitaxial Planar Silicon Transistor 2SC4705 Low-Frequency General-Purpose Amplifier, Applications (High hFE) Applications

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