www.DataSheet4U.com SD1407 RF & MICROWAVE TRANSIS.
Toshiba Semiconductor
2SD1407A - Silicon NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A 2SD1407A Power Amplifier Applications Industrial Applications Unit: mm • High breakdo.
Wing Shing Electronic
D1407 - 2SD1407
www.DataSheet4U.com 2SD1407 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SB1016 ABSOLUTE M.
Toshiba
2SD1407 - Silicon NPN Transistor
:) SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vqeo=100V . Low Collector Saturation Voltage : .
ST Microelectronics
SD1407 - RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
www.DataSheet4U.com SD1407 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . 30 MHz 28 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION .
SavantIC
2SD1407 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1407 www.datasheet4u.com DESCRIPTION ·With TO-220Fa package ·High b.
INCHANGE
2SD1407 - NPN Transistor
isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A ·Collector-Emitter Breakdown Vo.