CORPORATION High-Speed Analog N-Channel Enhanceme.
Toshiba Semiconductor
D2012 - 2SD2012
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: .
SavantIC
2SD2017 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2017 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING.
Panasonic Semiconductor
2SD2018 - Silicon NPN Transistor
Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • H.
SavantIC
2SD2012 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complem.
SavantIC
2SD2014 - SILICON POWER TRANSISTOR
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2014 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING.
ROHM
RSD201N10FRA - MOSFET
RSD201N10FRA Nch 100V 20A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 100V 46m 20A 20W Features 1) Low on-resistance. 2) Fast switching sp.
ROHM
RSD201N10 - MOSFET
RSD201N10 Nch 100V 20A Power MOSFET RSD201N10 Datasheet VDSS RDS(on) (Max.) ID PD 100V 46mW 20A 20W lFeatures 1) Low on-resistance. 2) Fast switc.
Toshiba Semiconductor
2SD2012 - NPN Transistor
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: .
STMicroelectronics
2SD2012 - NPN Silicon Power Transistor
® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL.
Fairchild Semiconductor
SSD2011A - Dual P-CHANNEL POWER MOSFET
Dual P-CHANNEL POWER MOSFET FEATURES ! Lower RDS(ON) ! Improved Inductive Ruggedness ! Fast Switching Times ! Low Input Capacitance ! Extended Safe Op.
Allegro
D2016 - 2SD2016
www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V.
Infineon
ESD201-B2-03LRH - Transient Voltage Suppressor Diodes
TVS Diode Transient Voltage Suppressor Diodes ESD201-B2-03LRH Bi-directional Dual Diode for ESD/Transient Protection ESD201-B2-03LRH Data Sheet Revisi.
MCC
2SD2012 - NPN Silicon Power Transistors
MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"#.
INCHANGE
2SD2012 - NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 DESCRIPTION ·High DC Current Gain- : hFE= 100 (Min)@ IC= 0.5A ·Low Saturation Volta.
Vanguard Semiconductor
VSD20100A - SCHOTTKY BARRIER RECTIFIERS
MBR20100CT/MBR30100CT/MBR20150CT/MBR20200CT VSD20100A/VSD30100A/VSD20150A/VSD20200A 20A-30A,100V~200V SCHOTTKY BARRIER RECTIFIERS Features ♦Low Power.
Vanguard Semiconductor
VSD20150A - SCHOTTKY BARRIER RECTIFIERS
MBR20100CT/MBR30100CT/MBR20150CT/MBR20200CT VSD20100A/VSD30100A/VSD20150A/VSD20200A 20A-30A,100V~200V SCHOTTKY BARRIER RECTIFIERS Features ♦Low Power.
Sanken electric
2SD2014 - Silicon NPN Transistor
2SD2014 Darlington Equivalent C circuit B (3kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Dr.
Sanken electric
2SD2015 - Silicon NPN Transistor
2SD2015 Darlington Equivalent C circuit B (3kΩ) (500Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Driver for Solenoid, Relay and.
Sanken electric
2SD2016 - Silicon NPN Transistor
2SD2016 Darlington Equivalent C circuit B (2kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor Application : Igniter, Relay and General Pur.
