SD201 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2012 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·Complem

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage:

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2SD2014 Darlington Equivalent C circuit B (3kΩ) (200Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application : Dr

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD201 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·Large curre

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD201 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Sustaining Voltage- : V

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® 2SD2012 NPN SILICON POWER TRANSISTOR s HIGH DC CURRENT GAIN s LOW SATURATION VOLTAGE s INSULATED PACKAGE FOR EASY MOUNTING APPLICATIONS s GENERAL

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2017 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING

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NPN Epitaxial Silicon Transistor Low Frequency Power Amplifier KSD2012 • Complementary to KSB1366 • This is a Pb−Free Device ABSOLUTE MAXIMUM RATING

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2014 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·DARLING

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Volt

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Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op

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www.DataSheet4U.com IS201, IS202, IS203, IS204, ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISQ203, ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALL

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www.DataSheet4U.com IS201, IS202, IS203, IS204, ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISQ203, ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALL

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www.DataSheet4U.com Darlington 2SD2016 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=200V VEB=6V

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MBR20100CT/MBR30100CT/MBR20150CT/MBR20200CT VSD20100A/VSD30100A/VSD20150A/VSD20200A 20A-30A,100V~200V SCHOTTKY BARRIER RECTIFIERS Features ♦Low Power

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Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • H

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Dual P-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op

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www.DataSheet4U.com IS201, IS202, IS203, IS204, ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISQ203, ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALL

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