SF-BF-3 Datasheet | Specifications & PDF Download

IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications  High frequency DC-DC converters Benefits  Low Gate-to-Drain Charge to Reduc

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IRFP260NPbF V(BR)DSS RDS(on) max. ID 200V 0.04 50A Features • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • F

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IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications  High frequency DC-DC converters Benefits  Low Gate-to-Drain Charge to Reduc

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l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated G l Lea

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IRFP4368PbF VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 75V 1.46m 1.85m 350A 195A Applications • High Efficiency Synchronou

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IRLR2705PbF Features • Logic-Level Gate Drive • Ultra Low On-Resistance • Advanced Process Technology • Fast Switching • Fully Avalanche Rated • Lead

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VBE2102M/VBFB2102M P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.250 at VGS = - 10 V 0.280 at VGS = -

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IRLR3410PbF IRLU3410PbF Features • Logic Level Gate Drive • Ultra Low On-Resistance • Surface Mount (IRLR3410) • Straight Lead (IRLU3410) • Advances

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IRLR3410PbF IRLU3410PbF Features • Logic Level Gate Drive • Ultra Low On-Resistance • Surface Mount (IRLR3410) • Straight Lead (IRLU3410) • Advances

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VDS VGS Max RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) -30 V ± 20 V 64 mΩ 103 mΩ PD - 96310C IRLML9301TRPbF HEXFET® Power MOSFET G1

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF0201N/D Low rDS(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transi

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IRF7704TRPBF-VB IRF7704TRPBF-VB Datasheet Dual P-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.016 at VGS

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IRFP2907PbF V(BR)DSS RDS(on) max. ID 75V 4.5m 209A Typical Applications • Telecom applications requiring soft start TO-247AC Features • Advance

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IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications  High frequency DC-DC converters Benefits  Low Gate-to-Drain Charge to Reduc

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IRFR3710ZPbF Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche A

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IRFP4137PbF VDSS RDS(on) typ. max. ID 300V 56m 69m 38A Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power S

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Application  Brushed Motor drive applications  BLDC Motor drive applications  PWM Inverterized topologies  Battery powered circuits  Half-bridge

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IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications  High frequency DC-DC converters Benefits  Low Gate-to-Drain Charge to Reduc

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IRF9358PbF Dual P-Channel HEXFET Power MOSFET in a SO-8 package VDS RDS(on) max (@ VGS = -10V) RDS(on) max (@ VGS = -4.5V) Qg (typical) ID (@ TA = 25

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HM7N60BF-VB HM7N60BF-VB Datasheet /$IBOOFM
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%4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (

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