SFD Datasheet | Specifications & PDF Download

SC Protector Self Control Protector Est. 1997/12/10 Rev.20 2002/11/27 Innovative way of safety control for Li-ion rechargeable battery At any momen

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30A, 20V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD2003T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg

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7A, 300V N-CHANNEL POWER MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s pr

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www.DataSheet.co.kr FGH60N60SFD 600V, 60A Field Stop IGBT August 2008 FGH60N60SFD 600V, 60A Field Stop IGBT Features • High current capability • Lo

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SSFD3004 DESCRIPTION The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use a

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80A,20VN-CHANNELMOSFET SFD2008T GENERAL DESCRIPTION The SFD2008T uses hi-semicon’s advanced trench technology and design to provide excellent RDS(ON

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9A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Hi-semicon’s propriet

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FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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                                 Main Product Characteristics: VDSS 30V RDS(on) 3.8mΩ (typ.) ID 90A TO-252 (D-PAK)  Features and Benefits: „ Ad

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Main Product Characteristics: VDSS -60V RDS(on) 23mΩ ID -26A TO-252 (DPAK) Main Features  Advanced MOSFET process technology  Special design

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SC Protector Self Control Protector Est. 1997/12/10 Rev.20 2002/11/27 Innovative way of safety control for Li-ion rechargeable battery At any momen

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LCD Module Specification Model No.: LG12864F-FFDWH6V LG12864F-LMDWH6V LG12864F-SFDWH6V LG12864F-BMDWH6V Table of Contents 1. BASIC SPECIFICATIONS ····

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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataSheet4U.com

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Main Product Characteristics VDS -60V RDS(ON) ID 40mΩ -26A Features and Benefits § Advanced MOSFET process technology § Ideal for high efficiency

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FGB20N60SFD — 600 V, 20 A Field Stop IGBT March 2015 FGB20N60SFD 600 V, 20 A Field Stop IGBT Features • High Current Capability • Low Saturation Vol

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Laurel Electronics Co., Ltd. LCD Module Specification Model No.: LC2042-SFDYH6-H3 Table of Contents 1. BASIC SPECIFICATIONS ··························

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LCD Module Specification Model No.: LG128643-SMDWH6V LG128643-SFDWH6V LG128643-BMDWH6V LG128643-LMDWH6V LG128643-FMDWH6V LG128643-FFDWH6V LG128643-QF

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IGBT - Field Stop 600 V, 60 A FGH60N60SFD Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum pe

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IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop

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80A, 30V N-CHANNEL MOSFET GENERAL DESCRIPTION The SFD3008T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charg

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