SFD Datasheet | Specifications & PDF Download

FGH40N60SFD — 600 V, 40 A Field Stop IGBT March 2015 FGH40N60SFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation Vo

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SSFD3004 DESCRIPTION The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use a

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SC Protector Self Control Protector Est. 1997/12/10 Rev.20 2002/11/27 Innovative way of safety control for Li-ion rechargeable battery At any momen

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                                 Main Product Characteristics: VDSS 30V RDS(on) 3.8mΩ (typ.) ID 90A TO-252 (D-PAK)  Features and Benefits: „ Ad

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www.DataSheet4U.com SemiWell Semiconductor SFD/U2N60 N-Channel MOSFET Features ■ ■ ■ ■ ■ RDS(on) (Max 5.0 Ω )@VGS=10V Gate Charge (Typical 9.5nC)

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SFDMB3902F Specifications and Applications Information 12/30/08 Preliminary Package Configuration Smar t F or ce LED Smart For orce Driver The ERG S

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IGBT - Field Stop 600 V, 40 A FGH40N60SFDTU, FGH40N60SFDTU-F085 Description Using Novel Field Stop IGBT Technology, onsemi’s new series of Field Stop

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www.DataSheet4U.com SFD60N03L Electrical Characteristics Symbol Off Characteristics BVDSS Δ BVDSS/ Δ TJ IDSS Drain-Source Breakdown Voltage VGS = 0V,

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SFD2EB3893F Specifications and Applications Information 03/21/11 The ERG Smart Force Series of LED Drivers are specifically designed for applications

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FGH20N60SFD — 600 V, 20 A Field Stop IGBT FGH20N60SFD 600 V, 20 A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sa

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Main Product Characteristics: VDSS -30V RDS(on) 6.3mΩ(typ) ID -85A TO-252 Features and Benefits:  Advanced MOSFET process technology  Special

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Laurel Electronics Co., Ltd. LCD Module Specification Model No.: LC1629-SFDYH6-D Table of Contents 1. BASIC SPECIFICATIONS ···························

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Frequency Doubler Features • • • • INPUT: 50 TO 3300 MHz OUTPUT: 100 TO 6600 MHz INPUT DRIVE LEVEL +10 dBm (NOMINAL) HERMETICALLY-SEALED PACKAGE FD26

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IGBT - Field Stop 600 V, 60 A FGH60N60SFD Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum pe

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FD25H / FD25HC / SFD25H Frequency Doubler Features  Input 5 - 2400 MHz  Output 10 - 4800 MHz  Input Drive Level = 23 dBm (nominal)  Hermetically-S

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FGB20N60SFD-F085 600V, 20A Field Stop IGBT FGB20N60SFD-F085 600V, 20A Field Stop IGBT Features • High current capability • Low saturation voltage: VC

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TSK60R070SFD 600V 47A N-Channel SJ-MOSFET TSK60R070SFD 600V 47A N-Channel SJ-MOSFET General Description Truesemi SJ-FET is new generation of high vo

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Laurel Electronics Co., Ltd. LCD Module Specification Model No.: LC2042-SFDYH6-H3 Table of Contents 1. BASIC SPECIFICATIONS ··························

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