SH15 Datasheet | Specifications & PDF Download

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, TO-247-2L FFSH15120A Description Silicon Carbide (SiC) Schottky Diodes use a comple

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Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe

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ADE–208–288 (Z) 2SH15 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application High speed power switching TO–3P Features • High speed switching • L

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® TSH150 WIDE BANDWIDTH AND BIPOLAR INPUTS SINGLE OPERATIONAL AMPLIFIER . . . . . LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE

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® TSH151 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER . . . . . . LOW DISTORTION GAIN BANDWIDTH PRODUCT : 150MHz UNITY GAIN STABLE SL

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STH FEATURES • High output power • Fixed gain Sitech Semiconductors Co.,Limited WWW.STH-SEMICO.COM 2 × 6 W stereo power amplifier SH1517; SH1517P G

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D A T A S H E E T Lighting Imaging Telecom Mercury Short Arc Lamps HSH1500KS Lamps for Photolithography Description PerkinElmer Optoelectronics

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D A T A S H E E T Lighting Imaging Telecom Mercury Short Arc Lamps HSH1500PILO Lamps for Photolithography Description PerkinElmer Optoelectronic

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Preliminary Data Sheet IXSH15N120A IGBT S Series - Improved SCSOA Capability IC25 = 30 A VCES = 1200 V VCE(sat) = 4.0 V Symbol V CES www.DataShe

Rating: 1 ★ (4 votes)

20 AUTOMATION & CONTROL Aluminum Electrolytic Capacitors ESH Series — Aluminum Electrolytic Capacitors, 105°C RoHS ESY Series — Aluminum Electrolyti

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HIGH Voltage IGBT IXSH 15N120B IXST 15N120B S Series - Improved SCSOA Capability IC25 VCES VCE(sat) = 30 A = 1200 V = 3.4 V Preliminary data S

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CTLSH15-30M364 SURFACE MOUNT SILICON LOW VF SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH15-30

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Schottky Barrier Rectifiers Production specification SH15--SH16 Features  Metal silicon junction, majority carrier conduction  High surge capabili

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IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES S Series - Improved SCSOA Capability VCE(sat) = 3.4 V HIGH Voltage IGBT with Diode Preli

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IXSH15N120AU1 PRELIMINARY DATA SHEET IGBT with Diode S Series - Improved SCSOA Capability C G E Symbol www.DataSheet4U.com IC25 = 30 A VCES = 120

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SBD T y p e : KSH15A H15A10B OULINE DRAWING FEATURES * Similar to TO-247AC(TO-3P)Case * Low Forward Voltage Drop * Low Power Loss,High Efficiency *

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CTLSH15-60M364 SURFACE MOUNT SILICON LOW VF SCHOTTKY RECTIFIER w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH15-60

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150V 8.5m N-Ch Power MOSFET JMSH1509AGQ Features • Ultra-low ON-resistance, RDS(ON) • Low Gate Charge, Qg • 100% UIS and Rg Tested • Pb-free Lead P

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D A T A S H E E T Lighting Imaging Telecom Mercury Short Arc Lamps HSH1500PIEO Lamps for Photolithography Description PerkinElmer Optoelectronic

Rating: 1 ★ (2 votes)

Schottky Barrier Rectifiers Production specification SH15F--SH16F Features  Metal silicon junction, majority carrier conduction  High surge capabi

Rating: 1 ★ (2 votes)