Si2304 N-Channel Enhancement Mode Field Effect Tr.
NXP
SI2304DS - N-channel FET
SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description N-channel enhancement mode fie.
Vishay
Si2304DS - N-channel MOSFET
N-Channel 30-V (D-S) MOSFET Si2304DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V ID (A) 2.5 2..Si2304 - N-Channel Enhancement Mode Field Effect Transistor
Si2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req.
Advanced Semiconductor
ASI2304 - NPN SILICON RF POWER TRANSISTOR
ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz.
Vishay
Si2304BDS - N-channel MOSFET
N-Channel 30 V (D-S) MOSFET Si2304BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V ID (A) 3.2.
MCC
SI2304 - N-channel FET
MCC R Micro Commercial Components Features Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4.SI2304 - 30V N-Channel Enhancement Mode MOSFET
SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced tren.
Vishay
SI2304DDS - N-Channel MOSFET
New Product N-Channel 30-V (D-S) MOSFET Si2304DDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.060 at VGS = 10 V 30 0.075 at VGS = 4.5 .
