SI2304 Datasheet | Specifications & PDF Download

UMW SI2304A 30V N-ChanneI MOSFET 1.Description The SI2304A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operatio

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■ Features ● VDS (V) = 30V ● RDS(ON) ＜ 35mΩ (VGS =-10V)，ID=3.6A ● RDS(ON) ＜ 50 mΩ (VGS =-4.5V)，ID=3A SI2304A N-Channel 30-V (D-S) MOSFET SOT–23 Equi

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SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 M3D088 Product data 1. Description N-channel enhancement mode fie

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MCC R Micro Commercial Components Features Micro Commercial Components 20736 Marilla Street Chatsworth CA 91311 Phone:(818) 701-4933 Fax: (818) 701-4

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Si2304 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req

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SI2304 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@ 10V, Ids@ 3.5A RDS(ON), Vgs@ 4.5V, Ids@ 2.8A 70m Ω 80mΩ Features Advanced tren

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New Product N-Channel 30-V (D-S) MOSFET Si2304DDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.060 at VGS = 10 V 30 0.075 at VGS = 4.5

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ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz

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N-Channel 30-V (D-S) MOSFET Si2304DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V ID (A) 2.5 2.

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N-Channel 30 V (D-S) MOSFET Si2304BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.070 at VGS = 10 V 0.105 at VGS = 4.5 V ID (A) 3.2

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