.
Toshiba
TV00570002CDGB - MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
TV00570002/003CDGB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Pseudo SRAM and NOR Flash Memory Mixed Multi-Chip Package DESCR.
Hitachi Semiconductor
3SK51 - Silicon N-Channel Dual Gate MOS FET
www.DataSheet4U.com .
Siliconix
BF900 - n-channel dual gate MOSFET
depletion-type n-channel H dual gate MOSFET designed for • • • Performance Curves MCB See Section 4 • Tuners-FM and TV • General Common Source RF .
ON Semiconductor
2N5061 - Sensitive Gate Silicon Controlled Rectifiers
2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl.
Huashan
HC106D - Sensitive Gate Silicon Controlled Rectifier
Shantou Huashan Electronic Devices Co.,Ltd. HC106D Sensitive Gate Silicon Controlled Rectifier General Description Glassivated PNPN devices designed.
ON Semiconductor
2N5060 - Sensitive Gate Silicon Controlled Rectifiers
2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl.
ON Semiconductor
MCR22-8 - SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
MCR22-6, MCR22-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak .
Seme LAB
D2011UK - METAL GATE RF SILICON FET
TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA C D B E 8 1 7 6 3 4 2 A F 5 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS R.
NEC Electronics
UPC1032H - Dual Low Noise Preamplifier Silicon Bipolar Monolithic Intergated Circuit
w w a D . w S a t e e h U 4 t m o .c w w w .D t a S a e h U 4 t e m o .c w w w .D at h S a t e e 4U . m o c .
ON Semiconductor
C106D - Sensitive Gate Silicon Controlled Rectifiers
C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high vol.
Hitachi
3SK45 - Silicon N-Channel Dual Gate MOS FET
w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c .
ON Semiconductor
C106D1 - Sensitive Gate Silicon Controlled Rectifiers
C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high vol.
ON Semiconductor
2N5062 - Sensitive Gate Silicon Controlled Rectifiers
2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl.
KCD
PCR606J - Sensitive Gate Silicon Controlled Rectifiers
PCR606J Sensitive Gate Silicon Controlled Rectifiers Symbol 2. Gate ○ Features www.DataSheet4U.com ▼ 1 23 ○ ○ 3. Anode 1. Cathode Repetitive Pe.
Apollo Electron
CR100-8 - Sensitive Gate Silicon Controlled Rectifiers
CR100-8 Sensitive Gate Silicon Controlled Rectifiers Symbol ○ 3. Anode ▼ ○ 2.Gate 1.Cathode ○ BVDRM = 600V IT(RMS) = 1.0A ITSM = 10A Features ◆ Rep.
ON Semiconductor
MCR22-6 - SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
MCR22-6, MCR22-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak .
