SILICON-GATE Datasheet | Specifications & PDF Download

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MCR22-6, MCR22-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for repetitive peak

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PCR606J Sensitive Gate Silicon Controlled Rectifiers Symbol 2. Gate ○ Features www.DataSheet4U.com ▼ 1 23 ○ ○ 3. Anode 1. Cathode Repetitive Pe

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depletion-type n-channel H dual gate MOSFET designed for • • • Performance Curves MCB See Section 4 • Tuners-FM and TV • General Common Source RF

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polyfet rf devices P121 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl

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polyfet rf devices P122 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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polyfet rf devices P124 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Mili

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TV00570002/003CDGB TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS TENTATIVE Pseudo SRAM and NOR Flash Memory Mixed Multi-Chip Package DESCR

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C106 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer appl

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polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military

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2N5060 Series Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer appl

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Shantou Huashan Electronic Devices Co.,Ltd. HC106D Sensitive Gate Silicon Controlled Rectifier General Description Glassivated PNPN devices designed

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C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high vol

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3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f

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