SK302 Datasheet | Specifications & PDF Download

Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q L

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Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q L

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Power F-MOS FETs 2SK3025 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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High Frequency FETs 3SK285 3SK302(Tentative), 3SK306(Tentative) Silicon N-Channel MOS For UHF amplification s Features q Though low voltage operati

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 2SK302 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer c

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Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3029 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3022 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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Power F-MOS FETs 2SK3028 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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SR3020 thru SR3060 SK3020 thru SK3060 MINIATURE SCHOTTKY BARRIER RECTIFIER CHENG- YI ELECTRONIC VOLTAGE RANGE 20 TO 60 Volts CURRENT 30.0 Amperes TO

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M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 4707 Dey Road Liverpool, N.Y. 13088 FEATURES: • Pin Compatible with MPM3002 and MPM3012 • P and N Ch

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Power F-MOS FETs 2SK3024 (Tentative) Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low

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DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. SBDA-302-1B 3 AM

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