SK35 Datasheet | Specifications & PDF Download

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source O

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2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications • Low drain-source ON-resistanc

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2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications • Low drain-source ON resistanc

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2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • Low drain-source ON resistanc

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2SK3564 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3564 Switching Regulator Applications • • • • Low drain-source ON res

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2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications • Low drain-source ON-resistanc

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2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MO

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2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications • Low drain-source ON resistanc

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www.DataSheet4U.com TENTATIVE 2SK3563 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 unit：ｍｍ Switching Regulator App

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www.DataSheet4U.com 2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed s

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2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm • Low drain-source O

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2SK3591-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p

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2SK3508-01MR FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-p

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a

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www.DataSheet4U.com 2SK3528-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-3PF Super FAP-G Series Features High speed swit

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2SK3515-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MO

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isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS <100 µA @VDS = 500 V ·100% ava

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isc N-Channel MOSFET Transistor 2SK3570-S FEATURES ·Drain Current : ID= 48A@ TC=25℃ ·Drain Source Voltage : VDSS= 20V(Min) ·Static Drain-Source On-R

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2SK3562 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3562 Switching Regulator Applications • Low drain-source ON-resistanc

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www.DataSheet4U.com 2SK3534-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200304 Super FAP-G Series Features H

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