DC COMPONENTS CO., LTD. R SM220 THRU SM260 RECTI.
Taiwan Semiconductor Company
TSM2302 - 20V N-Channel Enhancement Mode MOSFET
TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS.
Taiwan Semiconductor
TSM2302CX - N-Channel Power MOSFET
TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fas.
Taiwan Semiconductor
TSM2301A - 20V P-Channel MOSFET
TSM2301A 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 130 @ VGS =-4.5V -20 190 @ VGS =-.
Taiwan Semiconductor
TSM2307CX - 30V P-Channel MOSFET
TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) V.
Taiwan Semiconductor
TSM2309 - P-Channel Power MOSFET
TSM2309 60V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max.
Sinopower
SM2300NSA - N-Channel MOSFET
SM2300NSA ® N-Channel Enhancement Mode MOSFET Features · 20V/6A , RDS(ON)=25mW (max.) @ VGS=10V RDS(ON)=30mW (max.) @ VGS=4.5V RDS(ON)=40mW (max.) @.
Sinopower
SM2307PSA - P-Channel MOSFET
SM2307PSA Features · -20V/-6A , RDS(ON)=29mW (Max.) @ VGS=-4.5V RDS(ON)=40mW (Max.) @ VGS=-2.5V RDS(ON)=60mW (Max.) @ VGS=-1.8V · Reliable and Rugged .
Dc Components
SM230 - TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
DC COMPONENTS CO., LTD. R SM220 THRU SM260 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE.
Taiwan Semiconductor Company
TSM2301B - 20V P-Channel MOSFET
TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: 1..
Taiwan Semiconductor Company
TSM2301 - 20V P-Channel Enhancement Mode MOSFET
TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS .
GW
SM230B - 2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SM220B THRU SM2100B 2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES * Ideal for surface mount applications * Easy pick and place * Built-.
VBsemi
SM2307PSAC-TRG - P-Channel MOSFET
SM2307PSAC-TRG-VB SM2307PSAC-TRG-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0..
A1semi
ASM2307 - P-Channel FET
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A1semi
ASM2306 - N-Channel FET
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Sinopower
SM2308NSA - N-Channel MOSFET
SM2308NSA Features • 30V/5.2A , RDS(ON)= 35mΩ(max.) @ VGS=10V RDS(ON)= 45mΩ(max.) @ VGS=4.5V • Reliable and Rugged • Lead Free and Green Devices Avail.
Globaltech
GSM2307P - P-Channel MOSFET
GSM2307P 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .
Globaltech
GSM2309KP - P-Channel MOSFET
GSM2309KP 30V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench .
Silicon Standard
SSM2305AGN - P-channel Enhancement-mode Power MOSFET
SSM2305AGN P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D G .
Sinopower
SM2306NSA - N-Channel MOSFET
SM2306NSA Features · 30V/4.7A, RDS(ON)=40mW(max.) @ VGS=10V RDS(ON)=60mW(max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availabl.
Sinopower
SM2304NSA - N-Channel MOSFET
SM2304NSA Features · 30V/5.1A, RDS(ON)=25mW(max.) @ VGS=10V RDS(ON)=35mW(max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availabl.