SM230 Datasheet | Specifications & PDF Download

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TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Low gate charge for fas

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30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain www.DataSheet4U.com TSM2307 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 80 @ VGS

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TSM2301A 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 130 @ VGS =-4.5V -20 190 @ VGS =-

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TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS

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SMElectromagnets SERIES ELECTROMAGNET ∅A B HOLE WEIGHT TYPE (mm) C (Kg) SM1721 17 21 M3 0.023 SM2015 20 15 M3 0.025 SM2020 20 20 M3 0.05

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TSM2309 60V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max

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DC COMPONENTS CO., LTD. R SM220 THRU SM260 RECTIFIER SPECIALISTS TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE

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TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) V

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SM2300NSA ® N-Channel Enhancement Mode MOSFET Features · 20V/6A , RDS(ON)=25mW (max.) @ VGS=10V RDS(ON)=30mW (max.) @ VGS=4.5V RDS(ON)=40mW (max.) @

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GSM2308AP 60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: 1.

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SM220A thru SM2100A FEATURES Schottky Barrier Rectifiers Reverse Voltage 20 to100V * Plastic package has Underwriters Laboratory Flammability Clas

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SM2307PSAC-TRG-VB SM2307PSAC-TRG-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.

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GSM2309KP 30V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench

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SM2303PSA Features · -30V/-4A, RDS(ON) = 56mW(max.) @ VGS =-10V RDS(ON) = 88mW(max.) @ VGS =-4.5V · Reliable and Rugged · Lead Free and Green Devices

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SM220B THRU SM2100B 2.0 AMP SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS VOLTAGE RANGE www.DataSheet4U.com 20 to 100 Volts CURRENT FEATURES * Ideal

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GSM2309S 20V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench D

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SM2306NSA Features · 30V/4.7A, RDS(ON)=40mW(max.) @ VGS=10V RDS(ON)=60mW(max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availabl

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