SM230 Datasheet | Specifications & PDF Download

20V N-Channel Enhancement Mode MOSFET Product Description GSM2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide ex

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GSM2308AP 60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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TSM2302 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS

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TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS

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GSM2309KP 30V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench

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TSM2305 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 52 @ VGS =-4.5V -20 71 @ VGS

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GSM2307P 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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GSM2309S 20V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench D

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TSM2301B 20V P-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 100 @ VGS = -4.5V -20 150 @ VGS = -2.5V 190 @ VGS = -1.8V SOT-23 Pin Definition: 1.

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Imagis Co., Ltd. ISM2300(S) Preliminary Datasheet 1. Overview 1.1. Description The ISM2300(S) is a high performance enhanced image processor for han

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TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) V

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SM2307PSAC-TRG-VB SM2307PSAC-TRG-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = - 10 V - 30 0.

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30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain www.DataSheet4U.com TSM2307 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 80 @ VGS

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Filterless High Efficiency Mono 1.4 W Class-D Audio Amplifier SSM2301 FEATURES Filterless Class-D amplifier with Σ-Δ modulation No sync necessary whe

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SM220AF thru SM2100AF Schottky Barrier Rectifiers Reverse Voltage 20 to100V Forward Current 2.0A FEATURES * Plastic package has Underwriters Laborato

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TSM2303 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 180 @ VGS =-10V -30 300 @ VGS

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SSM2305AGN P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant. DESCRIPTION D G

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