DC COMPONENTS CO., LTD. R SM220 THRU SM260 RECTI.
Globaltech
11
GSM2309S - 20V P-Channel Enhancement Mode MOSFET
GSM2309S 20V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench D.
A1semi
8
ASM2307 - P-Channel FET
¼½ÿÿÿÿÿÿÿÿÿÿÿÿÿ£ÿÿÿ¤¥ÿÿ¦ÿ§¨ÿÿ©ÿªÿÿÿ«ÿÿ¦ÿÿ¬ÿÿÿÿ®ÿÿÿÿ§ÿ¯ÿÿÿÿÿÿÿÿÿÿÿÿÿ°ÿÿÿ±ÿÿÿ¢ÿÿÿÿÿ²ÿÿ²ÿÿÿÿÿÿÿÿ ÿÿÿ¡³ÿÿ²ÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿÿ.
Sinopower
8
SM2302NSA - N-Channel MOSFET
SM2302NSA Features · 20V/6A, RDS(ON)= 26mW(max.) @ VGS=4.5V RDS(ON)= 37mW(max.) @ VGS=2.5V · ESD Protected · Reliable and Rugged · Lead Free and Green.
Taiwan Semiconductor
6
TSM2309 - P-Channel Power MOSFET
TSM2309 60V P-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max.
Sinopower
5
SM2303PSA - P-Channel MOSFET
SM2303PSA Features · -30V/-4A, RDS(ON) = 56mW(max.) @ VGS =-10V RDS(ON) = 88mW(max.) @ VGS =-4.5V · Reliable and Rugged · Lead Free and Green Devices .
Taiwan Semiconductor Company
5
TSM2307 - 30V P-Channel MOSFET
30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain www.DataSheet4U.com TSM2307 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) -30 80 @ VGS.
Solentec
5
SM230127 - Electromagnets
SMElectromagnets SERIES ELECTROMAGNET ∅A B HOLE WEIGHT TYPE (mm) C (Kg) SM1721 17 21 M3 0.023 SM2015 20 15 M3 0.025 SM2020 20 20 M3 0.05 .
Taiwan Semiconductor
5
TSM2308 - N-Channel Power MOSFET
TSM2308 60V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 156 @ VGS = 10V 60 192 @ VGS .
A1semi
4
ASM2306 - N-Channel FET
ÿ2ÿ34ÿ5ÿ67ÿ7ÿ89ÿÿ ÿ75ÿ6ÿ7 ÿ8ÿ 8ÿ7ÿ ÿÿÿÿ8ÿÿÿÿÿ ÿÿÿÿÿÿÿÿ T@8Y:F;ÿ7:==5@k \Y77 ?Y @Y7C8ASÿÿCÿVÿÿÿÿSÿÿ=Ueÿ 23\ ÿÿ2ab5 nEÿ^ÿ\B7ÿDÿnaE\ o.
Sinopower
4
SM2300NSA - N-Channel MOSFET
SM2300NSA ® N-Channel Enhancement Mode MOSFET Features · 20V/6A , RDS(ON)=25mW (max.) @ VGS=10V RDS(ON)=30mW (max.) @ VGS=4.5V RDS(ON)=40mW (max.) @.
Sinopower
4
SM2304NSA - N-Channel MOSFET
SM2304NSA Features · 30V/5.1A, RDS(ON)=25mW(max.) @ VGS=10V RDS(ON)=35mW(max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availabl.
Sinopower
4
SM2307PSA - P-Channel MOSFET
SM2307PSA Features · -20V/-6A , RDS(ON)=29mW (Max.) @ VGS=-4.5V RDS(ON)=40mW (Max.) @ VGS=-2.5V RDS(ON)=60mW (Max.) @ VGS=-1.8V · Reliable and Rugged .
Sinopower
4
SM2305PSA - P-Channel MOSFET
SM2305PSA ® P-Channel Enhancement Mode MOSFET Features • -20V/-4.9A , RDS(ON)=43mΩ (Max.) @ VGS=-4.5V RDS(ON)=58mΩ (Max.) @ VGS=-2.5V RDS(ON)=88.
Taiwan Semiconductor Company
4
TSM2301 - 20V P-Channel Enhancement Mode MOSFET
TSM2301 20V P-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = - 20V RDS (on), Vgs @ - 4.5V, Ids @ - 2.8A =130mΩ RDS .
Sinopower
3
SM2308NSA - N-Channel MOSFET
SM2308NSA Features • 30V/5.2A , RDS(ON)= 35mΩ(max.) @ VGS=10V RDS(ON)= 45mΩ(max.) @ VGS=4.5V • Reliable and Rugged • Lead Free and Green Devices Avail.
Globaltech
3
GSM2307P - P-Channel MOSFET
GSM2307P 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. .
Globaltech
3
GSM2309KP - P-Channel MOSFET
GSM2309KP 30V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench .
Sinopower
3
SM2306NSA - N-Channel MOSFET
SM2306NSA Features · 30V/4.7A, RDS(ON)=40mW(max.) @ VGS=10V RDS(ON)=60mW(max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green Devices Availabl.
Sinopower
3
SM2300NSAN - N-Channel MOSFET
SM2300NSAN Features • 20V/4A, RDS(ON)= 40mΩ(max.) @ VGS= 4.5V R= DS(ON) 55mΩ(max.) @ V= GS 2.5V RDS(ON)= 85mΩ(max.) @ VGS= 1.8V • Reliable a.
Globaltech
3
GSM2308AP - N-Channel MOSFET
GSM2308AP 60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology..