SP03-6 Datasheet | Specifications & PDF Download

BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode fiel

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MSP0304 -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS

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MSP0315D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-15A RDS(ON) <54mΩ @ VGS=-10V RDS(ON) <82mΩ @ VGS=-4.5V

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MSP0330D -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-30A RDS(ON) <18mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.5V

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MSP0309W -30V(D-S) P-Channel Enhancement Mode Power MOS FET GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS

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MSP0312W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -12A RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 16mΩ @ VGS=

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MSP0305W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VG

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MSP0307W -30V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-30V,ID =-6.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.

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Features  P-Channel，-5V Logic level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  100% Avalanche Tested

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www.DataSheet.co.kr PALO(P80)Series P0211N SP0231N Model: S SP0311N SP0421N SP0401N SP0412N SP0612N SP0802N SP1203N SP1214N SP1604N SP0422N SP0622N S

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ROHS series Part Number Code. Example : N 20 (1) (2) S P 0 0 5 (3) (4) - 5 (5) (6) (7) (1) NTC. ( Negative Temperature Coefficient ) (2) Nominal Diam

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ROHS series Part Number Code. Example : N 20 (1) (2) S P 0 0 5 (3) (4) - 5 (5) (6) (7) (1) NTC. ( Negative Temperature Coefficient ) (2) Nominal Diam

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BSP030 BSP030 N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.01

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