SR2.8 Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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® WON-TOP ELECTRONICS SR22 – SR210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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® WON-TOP ELECTRONICS SR2150 – SR2200 2.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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® WON-TOP ELECTRONICS SR22 – SR210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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SR202 - SR215 2.0 Amp. Schottky Barrier Rectifier DO-204AC / DO-15 Voltage 20 V to 150 V Current 2.0 A FEATURES • Low power losses, high efficien

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Certificate : TH97/10561QM Certificate : TW00/17276EM SR220 - SR2100 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 2.0 Amperes DO -

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UNISONIC TECHNOLOGIES CO., LTD SR2803 330KHZ, 3A SYNCHRONOUS BUCK CONTROLLER „ DESCRIPTION LINEAR INTEGRATED CIRCUIT The UTC SR2803 is a synchronous

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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) PD-95816E IRHNJ67130 JANSR2N7587U3 100V, N-CHANNEL REF: MIL-PRF-19500/746 R6 TECHNOLOGY Prod

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IRHN7250 (JANSR2N7269U) Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology PD-90679M Features •

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RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39) PD-90882H IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630 RAD Hard™HEXFET ® TE

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AZSR216/316 Discontinuation Notice Discontinuation date: Date of last order: Recommended replacement: 31.12.2014 31.03.2015 RUC Discontinued 16 A

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www.DataSheet.co.kr Naina Semiconductor Ltd. 85NS(R) Standard Recovery Diodes (Stud and Lead Type) Features • Diffused Series • Industrial grade •

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Naina Semiconductor Ltd. 350NS(R) Standard Recovery Diodes (Stud and Flat Base Type), 350A Features  Diffused Series  Industrial grade  Available

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IRHMS9A97260 (JANSR2N7666T1) PD-97991 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Techno

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MSR2N2907AUB / UBC Rad Hard PNP Silicon Switching Transistor Screened per MIL-PRF-19500 & ESCC 22900 Radiation Level TID ELDRS QPL RANGE and RAD LE

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER RECTIFIERS SR220 - SR2100 DO-15 Axial Lea

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www.DataSheet4U.com Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.

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