SS39 Datasheet | Specifications & PDF Download

1SS390 SILICON EPITAXIAL PLANAR DIODE Band Swithing Diode Features • Extremely small surface mounting type • High reliability Applications • High freq

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Data Sheet Band Switching Diode 1SS390 Applications High frequency switching Dimensions (Unit : mm) 0.8±0.05 Features 1)Ultra small mold type.

Rating: 1 ★ (3 votes)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching  Low forward voltage: VF (2) = 0.23V (typ.)  Small pac

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS392 High Speed Switching Application 1SS392 Unit: mm z Low forward voltage z Low reverse cu

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application 1SS394 Unit: mm z Small package z Low forward voltage:

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application 1SS395 Unit: mm z Small package z Low forward voltage:

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MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

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MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

Rating: 1 ★ (3 votes)

SS32 - SS320 Taiwan Semiconductor 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES ● Low power loss, high efficiency ● Ideal for aut

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BL FEATURES www.DataSheet4U.com GALAXY ELECTRICAL SS32 - - - SS310 REVERSE VOLTAGE: 20 - 100 V FORWARD CURRENT: 3.0 A SURFACE MOUNT SCHOTTKY BARRI

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SS39ET/SS49E/SS59ET Series Linear Hall-effect Sensor ICs Datasheet Magnetoresistive Sensor ICs The SS39ET/SS49E/SS59ET Series low-cost linear Hall-ef

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS393 High Speed Switching Application 1SS393 Unit: mm z Low forward voltage z Low reverse cu

Rating: 1 ★ (2 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS397 High Voltage, High Speed Switching Applications 1SS397 Unit: mm  Small package : SC-70  Low f

Rating: 1 ★ (2 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS399 High Voltage Switching Applications 1SS399 Unit: mm  Small package : SC-61  Low forward volta

Rating: 1 ★ (2 votes)

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

Rating: 1 ★ (2 votes)

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

Rating: 1 ★ (2 votes)

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

Rating: 1 ★ (2 votes)

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

Rating: 1 ★ (2 votes)

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

Rating: 1 ★ (2 votes)

MSS39-xxx-x Series P-Type Silicon Schottky Diodes Features  Very Low 1/f Noise  Detector Applications up to 40 GHz  Chip Beam Lead and Packaged Dev

Rating: 1 ★ (2 votes)