STM-256 Datasheet | Specifications & PDF Download

M48Z35, M48Z35Y 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM Datasheet - production data 28 1 PDIP 28.7 Battery CAPHAT™ SNAPHAT® battery 28 1 SOH28 Featur

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M27C256B 256 Kbit (32Kb × 8) UV EPROM and OTP EPROM Feature summary ■ 5V ± 10% supply voltage in Read operation ■ Access time: 45ns ■ Low power consu

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M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO

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M27C2001 2 Mbit (256Kb x 8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in Read operation ■ Access time: 55ns ■ Low power consumption:

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M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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M28256 256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection PRELIMINARY DATA FAST ACCESS TIME: – 90ns at 5V – 120ns at 3V SINGLE SUPPLY V

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M24256-B M24128-B 256/128 Kbit Serial I C Bus EEPROM With Three Chip Enable Lines PRELIMINARY DATA s Compatible with I2C Extended Addressing s Two Wi

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M48Z35, M48Z35Y 256 Kbit (32 Kbit x 8) ZEROPOWER® SRAM Datasheet - production data 28 1 PDIP 28.7 Battery CAPHAT™ SNAPHAT® battery 28 1 SOH28 Featur

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M24256-A 256 Kbit Serial I C Bus EEPROM With Two Chip Enable Lines PRELIMINARY DATA s s Compatible with I2C Extended Addressing Two Wire I2C Serial I

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M27V201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION:

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M27V400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM NOT FOR NEW DESIGN s s M27V400 is replaced by the M27W400 3V to 3.6V LOW VOLTAGE in REA

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M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF Datasheet 256-Kbit serial I²C bus EEPROM TSSOP8 (DW) 169 mil width SO8N (MN) 150 mil width UFDFPN

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M27W201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V

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M48T39Y 256 Kb (32K x8) TIMEKEEPER® SRAM PRELIMINARY DATA s INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT, BATTERY an

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M74HC51 DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE s s s s s s s HIGH SPEED: tPD = 11ns (TYP.) at VCC = 6V LOW POWER DISSIPATION: ICC = 1µA(MAX.) a

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M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit (32 Kbit x 8) TIMEKEEPER® SRAM Features ■ Integrated ultra low power SRAM, real-time clock, power-fail control

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M24256-BW M24256-BR M24256-BF M24256-DR M24256-DF Datasheet 256-Kbit serial I²C bus EEPROM TSSOP8 (DW) 169 mil width SO8N (MN) 150 mil width UFDFPN

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M28F256 256 Kbit (32Kb x8, Bulk) Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typic

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M27V256 256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION:

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