Si2305 Datasheet | Specifications & PDF Download

UMW R ■ Features ● VDS (V) = -20V ● RDS(ON)＜40mΩ(VGS=-4.5V),ID=-4.2A ● RDS(ON)＜50mΩ(VGS=-2.5V),ID=-3.4A UMW SI2305A P-Channel MOSFET SOT–23 D G S 1

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Si2305 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced tr

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Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) 0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.

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MCC R Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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P-Channel Power MOSFE Production specification SI2305DS DESCRIPTION SI2305DS is the P-Channel logic enhancement mode power field effect transistor i

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P-Channel 8 V (D-S) MOSFET Si2305CDS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V -8 0.048 at VGS = - 2.5 V 0.0

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www.DataSheet.co.kr New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES ID (A) - 4.1 - 3.4 - 2.0 7.8 nC Qg (Typ.) PRODUCT S

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