SiC-MOSFET Datasheet | Specifications & PDF Download

Public IMBG65R033M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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MD300HFC120C2S STARPOWER SEMICONDUCTOR MD300HFC120C2S 1200V/300A 2 in one-package MOSFET Module MOSFET General Description STARPOWER MOSFET Power Mo

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ACPL-352J 5.0 Amp Output Current IGBT and SiC/GaN MOSFET Gate Drive Optocoupler with Integrated Over Current Sensing, FAULT, GATE and UVLO Status Feed

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L NTH4L020N120SC1 Features • Typ. RDS(on) = 20 mW •

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Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L NTHL1000N170M1 Features • Typ. RDS(on) = 960 mW • Ultra Low Gate Charge (typ

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, Bare Die NVC080N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology t

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Features • CRM G2 SIC MOSFET Technology • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Avalanche Rugged

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

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SiC Power MOSFET Kelvin Source gate connection Part number IXFN70N120SK IXFN70N120SK ID25 = 68 A VDSS = 1200 V R = DS(on) max 34 mΩ D (3) KS G

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ACPL-P346/ACPL-W346 2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Data Sheet Description The Broa

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ACPL-P346/ACPL-W346 2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Data Sheet Description The Broa

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SCT2120AF N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 650V 120m 29A 165W Features 1) Low on-resistance 2) Fast switching spe

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ACPL-P345 and ACPL-W345 1.0 Amp Output Current Power & SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Voltage in Stretched SO6 Data Sheet

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ACPL-P345 and ACPL-W345 1.0 Amp Output Current Power & SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Voltage in Stretched SO6 Data Sheet

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ACPL-P347 and ACPL-W347 1.0 Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The ACPL-P347/W

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SCT2160KE N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 160m 22A 165W Features 1) Low on-resistance 2) Fast switching spe

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SCT2080KEHR Automotive Grade N-channel SiC power MOSFET VDSS RDS(on) (Typ.) ID 1200V 80mΩ 40A lOutline TO-247N Datasheet lFeatures 1) Low on-resi

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