SiC-MOSFET Datasheet | Specifications & PDF Download

SiC Power MOSFET MCB30P1200LB ID25 = 38 A VDSS = 1200 V R = DS(on) max 52 mΩ Part number MCB30P1200LB 7 T1 4 9 8 7 Itsoohlaeteadtsisnukrface

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G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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SiC Power MOSFET Module 1200 V, 40 mW, 55 A 3-Phase Bridge Power Module NVXK2VR40WXT2 Features • DIP Silicon Carbide 3−Phase Bridge Power Module for

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IMBG120R008M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features • VDSS = 1200 V at Tvj

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G3R40MT12D 1200 V 40 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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SCT3030AL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 650V 30mW 70A 262W lFeatures 1) Low on-resistance 2) Fast switching speed

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Public IMLT65R050M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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G3R20MT17K 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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G2R120MT33-CAL 3300 V 120 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G2R™ Technology with +20 V Gate Drive • Superior

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SCT3022AL N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 650V 22mW 93A 339W lOutline TO-247N lInner circuit (1)(2)(3) lFeatures

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Single 6 A High-Speed, Low-Side SiC MOSFET Driver NCV51705 The NCV51705 driver is designed to primarily drive SiC MOSFET transistors. To achieve the l

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AIMBG120R120M1 CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET PG-TO263-7-HV-ND5.8 Fea

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L NTBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS

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Jun. 2024 IV3Q12013T4Z- Gen3 1200V 13.5mΩ Automotive SiC MOSFET Features Outline: ⚫ 3rd Generation SiC MOSFET Technology with +15~+18V gate drive ⚫

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MD29HFS120C2S_B20 STARPOWER SEMICONDUCTOR MD29HFS120C2S_B20 1200V/2.9mΩ 2 in one-package General Description STARPOWER MOSFET Power Module provides ve

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SCT2450KE N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID PD 1200V 450mΩ 10A 85W lFeatures 1) Low on-resistance 2) Fast switching spee

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FSP8N60/FS8N60 600V N-Channel MOSFET Features ■ 7.5A,600v,RDS(on)=1.0Ω@VGS=10V ■ Gate charge (Typical 30nC) ■ High ruggedness ■ Fast switching ■ 100%

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SCT2080KE N-channel SiC power MOSFET VDSS RDS(on) (Typ.) ID 1200V 80mΩ 40A lOutline TO-247 TO-247N Datasheet lFeatures 1) Low on-resistance 2) Fa

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, D2PAK-7L NTBG020N090SC1 Features • Typ. RDS(on) = 20 mW @ VG

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SCT3017ALHR Automotive Grade N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 17mΩ 118A 427W lOutline TO-247N lInner circuit

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