SiC-MOSFET Datasheet | Specifications & PDF Download

G3R20MT17N 1700 V 20 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON)

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TO-263-7 NSF030120D7A0 1200 V, 30 mΩ, N-channel SiC MOSFET 14 May 2024 Product data sheet 1. General description The NSF030120D7A0 is a Silicon Car

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L NVH4L015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V

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X.PAK NSF017120T2A0 1200 V, 17 mΩ, N-channel SiC MOSFET 9 April 2025 Product data sheet 1. General description The NSF017120T2A0 is a Silicon Carbi

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 13 mohm, 1200 V, M3S, TO-247-4L NTH4L013N120M3S Features • Typ. RDS(on) = 13 mW @

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NSF040120L4A0 1200 V, 40 mΩ, N-channel SiC MOSFET 2 February 2024 Product data sheet 1. General description The NSF040120L4A0 is a Silicon Carbide b

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MD22HTS120P6HET STARPOWER SEMICONDUCTOR MD22HTS120P6HET 1200V/2.20mΩ 6 in one-package SiC MOSFET Module SiC MOSFET General Description STARPOWER SiC

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MOSFET - SiC Power, Single N-Channel, TO247-3L 650 V, 19 mW, 99 A NVHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25 mW @

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Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package NXH006P120MNF2PTG The NXH006P120MNF2 is

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 900 V, M2, TO-247-4L V(BR)DSS 900 V RDS(ON) MAX 28 mW @ 15 V ID MAX 11

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Silicon Carbide (SiC) MOSFET – EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L NTBG028N170M1 Features • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (typ. QG

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Silicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M2, TOLL NTBL045N065SC1 Features • Typ. RDS(on) = 33 mW @ VGS = 18 V Typ. RDS(on) = 45 mW @

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Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V , M2, TO-247-3L NTHL025N065SC1 Features • Typ. RDS(on) = 19 mW @ VGS = 18 V Typ. RDS(on) = 25

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L NVBG015N065SC1 Features • Typ. RDS(on) = 12 mW @ VGS = 18 V Ty

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SiC Power MOSFET Module 1200 V, 80 mW, 31 A Full Bridge Power Module NVXK2PR80WXT2 Features • DIP Silicon Carbide Full Bridge Power Module for On−Bo

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 19 mohm, 650 V, M2, TO-247-4L NTH4L025N065SC1 Features • Typ. RDS(on) = 19 mW @

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MSCSM120HRM052NG T-Type SiC MOSFET Power Module Product Overview The MSCSM120HRM052NG device is a T-type Silicon Carbide (SiC) MOSFET power module wit

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