SiC-MOSFET Datasheet | Specifications & PDF Download

Public IMBG65R033M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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IMZ120R045M1 IMZ120R045M1 CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state cha

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L NVH4L040N120SC1 Features • Typ. RDS(on) = 40 mW • Ultra Low

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MD300HFC120C2S STARPOWER SEMICONDUCTOR MD300HFC120C2S 1200V/300A 2 in one-package MOSFET Module MOSFET General Description STARPOWER MOSFET Power Mo

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ACPL-P346/ACPL-W346 2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Data Sheet Description The Broa

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ACPL-352J 5.0 Amp Output Current IGBT and SiC/GaN MOSFET Gate Drive Optocoupler with Integrated Over Current Sensing, FAULT, GATE and UVLO Status Feed

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L NTH4L020N120SC1 Features • Typ. RDS(on) = 20 mW •

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KEY FEATURES ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIEN

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Silicon Carbide (SiC) MOSFET - EliteSiC, 960 mohm, 1700 V, M1, TO-247-3L NTHL1000N170M1 Features • Typ. RDS(on) = 960 mW • Ultra Low Gate Charge (typ

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TO-263-7 NSF060120D7A0 1200 V, 60 mΩ, N-channel SiC MOSFET 14 May 2024 Product data sheet 1. General description The NSF060120D7A0 is a Silicon Car

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Silicon Carbide (SiC) MOSFET – 80 mohm, 1200 V, M1, Bare Die NVC080N120SC1 Description Silicon Carbide (SiC) MOSFET uses a completely new technology t

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G3R350MT12J 1200 V 350 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature C

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Features • CRM G2 SIC MOSFET Technology • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Avalanche Rugged

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

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Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanch

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SiC Power MOSFET Kelvin Source gate connection Part number IXFN70N120SK IXFN70N120SK ID25 = 68 A VDSS = 1200 V R = DS(on) max 34 mΩ D (3) KS G

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IMZA120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technolo

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ACPL-P346/ACPL-W346 2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Data Sheet Description The Broa

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