.
Solitron Devices
5
SD11740 - 1200V SiC N-Channel Power MOSFET
KEY FEATURES ID = 100A RDS(ON) = 8.6mΩ LOW GATE CHARGE KELVIN SOURCE SOT 227B BENEFITS PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER SYSTEM EFFICIEN.
Solitron Devices
3
SD11810 - 650V Silicon Carbide Schottky Diode
SD11810 650V Silicon Carbide Schottky Diode - 1 KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEP.
Solitron Devices
3
SD11806 - Dual 1200V Silicon Carbide Schottky Diode
SD11806 Dual 1200V Silicon Carbide Schottky Diode - 1 KEY FEATURES VRRM 1200V IF @ 125°C 20A/40A ISOLATED BACKSIDE ZERO REVERSE RECOVERY TO-258 HERME.
Solitron Devices
3
SD11910 - SiC Half-Bridge Power Module
2 3 1 t’ 4 5 6 9 [+] Q1 7 [~] Q2 8 [-] PIN CONNECTIONS PIN DESCRIPTION 1 S1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 6 S2 .
Solitron Devices
3
SD11812 - 1200V Silicon Carbide Dual Schottky Doubler Diode
SD11812 1200V Silicon Carbide Dual Schottky Doubler Diode - 1 KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING .
Solitron Devices
3
SD11707 - 1200V SiC N-Channel Power MOSFET
KEY FEATURES LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS.
Solitron Devices
3
SD11902 - SiC Half-Bridge Power Module
2 3 1 t’ 4 5 6 9 [+] Q1 D1 7 [~] Q2 D2 8 [-] PIN CONNECTIONS PIN DESCRIPTION 1 S1 2 G1 3 Temp. Monitoring 4 Temp. Monitoring 5 G2 .
Solitron Devices
2
SD11705 - 1200V SiC N-Channel Power MOSFET
KEY FEATURES LOW RDS(ON) AND QG AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS.
Solitron Devices
2
SD11801 - 1200V Silicon Carbide Schottky Diode
SD11801 1200V Silicon Carbide Schottky Diode - 1 KEY FEATURES VRRM 1200V IF @ 125°C 10A SMALL FOOTPRINT ZERO REVERSE RECOVERY PLASTIC COTS PACKAGING .
Solitron Devices
2
SD11807 - 650V Silicon Carbide Schottky Diode
SD11807 650V Silicon Carbide Schottky Diode - 1 KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEP.
Solitron Devices
2
SD11710 - 700V SiC N-Channel Power MOSFET
KEY FEATURES ID = 50A RDS(ON) = 15mΩ ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW G.
Solitron Devices
1
SD11428 - 1200V Silicon Carbide IGBT
SD11428 1200V Silicon Carbide IGBT - 1 KEY FEATURES BVces 1200V Ids (on) @ 125°C 22A TO-3 PACKAGE BENEFITS COMPACT, LIGHTWEIGHT DESIGN INCREASED POWE.
Solitron Devices
1
SD11803 - 1200V 10A Silicon Carbide Schottky Diode
SD11803 1200V 10A Silicon Carbide Schottky Diode - 1 KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR .
Solitron Devices
1
SD11704 - 900V SiC N-Channel Power MOSFET
KEY FEATURES LOW RDS(ON) AND QG AVALANCHE RATED TO-258 5L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS.
Solitron Devices
1
SD11808 - 1700V 10A Silicon Carbide Schottky Diode
SD11808 1700V 10A Silicon Carbide Schottky Diode - 1 PROVISIONAL KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCH.
Solitron Devices
1
SD11912 - SiC Dual MOSFET Power Module
PROVISIONAL Q1 2 [G1] 10 [D1] 3 1 [KS1] t° 9 [S1] 7 [D2] Q2 4 5 [G2] 6 [KS2] 8 [S2] PIN CONNECTIONS PIN DESCRIPTION 1 KS1 2 G1 3 Te.
Solitron Devices
1
SD11461 - N-Channel Power MOSFET
KEY FEATURES LOW THERMAL RESISTANCE OPTIMIZED FOR FAST SWITCHING TO-258 OR TO-254 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREE.
Solitron Devices
1
SD11957 - SiC Half-Bridge Power Module
9 [+] Q1 2 1 7 [~] Q2 5 6 8 [-] PIN CONNECTIONS PIN DESCRIPTION 1 S1 2 G1 3 n/c 4 n/c 5 G2 6 S2 7 AC 8 N 9 P SD11957 SiC Hal.