T15mm Datasheet | Specifications & PDF Download

BT151-500C SCR Rev.02 - 23 September 2021 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a TO220

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isc Thyristors BT151-500R APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,moto

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2.4 (59mm) MAX TUNG-SOL PENTODE KT150 KT150 5.57 (141.5mm) MAX 5.0 (127mm) MAX GLASS BULB LARGE WAFER OCTAL WITH BARRIERS 7 PIN LOW LOSS B7-9

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_ _ _ _ _ _ _jl__B_T153_ FAST TURN-OFF THYRISTOR Glass-passivated, eutectically bonded, fast turn-off thyristor in a TO-220AB envelope, intended for

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE BJ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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isc Thyristors BT152 APPLICATIONS ·It is suitable to fit all modes of control found in applications such as overvoltage crowbar protection,motor con

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Silicon FS Planar IGBT BT15T120ANF ○R General Description： Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 120

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NCEP60T15G NCE N-Channel Super Trench Power MOSFET Description The NCEP60T15G uses Super Trench technology that is uniquely optimized to provide t

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http://www.ncepower.com Pb Free Product NCEP12T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology tha

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WeEn Semiconductors Thyristors Product specification BT152 series GENERAL DESCRIPTION Glass passivated thyristors in a plastic envelope, intended

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BT151S-800R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT428 (DPAK) s

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BT151 SCRS UNISONIC TECHNOLOGIES CO., LTD SCR  DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring

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UP72 T150 UP72 UP7 motor protector Specifications Operating Temp 55℃～150℃（5℃ step） 　±5℃、±7℃、±10℃ Tolerance 　 30±15Ｋ(Standard） Differential Breaking

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www.DataSheet4U.com Preliminary SemiWell Semiconductor BT152-600 Symbol 3. Gate ○ ○ Silicon Controlled Rectifiers ▼ 1 23 Features Repetitive Pea

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http://www.ncepower.com Pb Free Product NCEP30T15GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T15GU uses Super Trench technolo

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Date:- 22 July, 2019 Data Sheet Issue:- P1 Tentative Data Insulated Gate Bi-Polar Transistor Type T1500EC33E Absolute Maximum Ratings VCES VDC link

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Silan Microelectronics SGT15T60SD1T/F/S_Datasheet 15A, 600V FIELD STOP IGBT DESCRIPTION C 2 The SGT15T60SD1T/F/S field stop III IGBT features lo

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Silan Microelectronics SGT15U65SD1F(FD)_Datasheet 15A, 650V FIELD STOP IGBT DESCRIPTION The SGT15U65SD1F(FD) field stop IGBT adopts Silan Field Sto

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BT153-1200T SCR Rev.01 - 17 November 2023 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE BJ AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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