TFB-2 Datasheet | Specifications & PDF Download

Data Travo Flyback BSC25-N0211 Tampak Bawah Skema Koneksi No. Pin Fungsi 1 2 H B+110 3 4 H1 AFC Digunakan Pada TV : China Brand Persamaan :

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Data Travo Flyback TFB4122BD Tampak Bawah Skema Koneksi No. Pin 1 2 Fungsi H B+115 3 4 5 67 8 9 10 185 GND NC 26 12 ABL HT AFT Digunakan Pa

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www.DataSheet.co.kr BOX CAPACITORS IGBT APPLICATIONS MKP Series C4B L General characteristics - Self-Healing - Low losses - High ripple current -

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PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended f

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PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w

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www.DataSheet.co.kr BOX CAPACITORS IGBT APPLICATIONS MKP Series C4B L General characteristics - Self-Healing - Low losses - High ripple current -

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www.DataSheet.co.kr BOX CAPACITORS IGBT APPLICATIONS MKP Series C4B L General characteristics - Self-Healing - Low losses - High ripple current -

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TFBR Stainless Steel Power Resistors The TFBR series provides high power density in a low profile package. Designed for easy assembly and supplied wit

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Filter Coils < Pin Type:TFB Series> Type: TFB-3LG •Ÿ Product Description 9.7mm Max.(L¡Á W), 12.5mm Max. Height. •E 26.7¡Á •E Operating frequency:1

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www.DataSheet.co.kr BOX CAPACITORS IGBT APPLICATIONS MKP Series C4B L General characteristics - Self-Healing - Low losses - High ripple current -

(9 views)

www.DataSheet.co.kr BOX CAPACITORS IGBT APPLICATIONS MKP Series C4B L General characteristics - Self-Healing - Low losses - High ripple current -

(9 views)

PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz Description The PTFB091802FC LDMOS FET is designed for use in pow

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TFB2002BI FUTUREBUS+ I/O CONTROLLER SLLS182 – AUGUST 1994 D Industrial Temperature Version of the TFB2002B With an Operating Range of – 20°C to 85°C

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NIKO-SEM N-Channel Enhancement Mode P1820HTFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V

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PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTF

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www.DataSheet.co.kr BOX CAPACITORS IGBT APPLICATIONS MKP Series C4B L General characteristics - Self-Healing - Low losses - High ripple current -

(8 views)

PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-w

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PTFB091507FH Thermally-Enhanced High Power RF LDMOS FET 160 W, 28 V, 920 – 960 MHz Description The PTFB091507FH is an LDMOS FET intended for use in

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Features Datasheet RX72T Group R01DS0331EJ0110 Renesas MCUs 200-MHz, 32-bit RX MCU, on-chip FPU, 1160 CoreMark, Supportive of 5V power supply, Re

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PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for clas

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