Filter Coils < Pin Type: TFB Series> Type: •Ÿ .
ETC
TFB4125CH - Data Travo Flyback
Data Travo Flyback BSC25-N0211 Tampak Bawah Skema Koneksi No. Pin Fungsi 1 2 H B+110 3 4 H1 AFC Digunakan Pada TV : China Brand Persamaan : .
Infineon
PTFB212503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w.
Infineon
PTFB210801FA - Thermally-Enhanced High Power RF LDMOS FET
PTFB210801FA Thermally-Enhanced High Power RF LDMOS FET 80 W, 28 V, 2110 – 2170 MHz Description The PTFB210801FA LDMOS FET is designed for use in mu.
UNIKC
P1820HTFB - N-Channel MOSFET
P1820HTFB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200V 150mΩ @VGS = 10V 18A TO-220F ABSOLUTE MAXIMUM RATINGS (T.
Kemet
C4BTFBX4400ZEEx - BOX CAPACITORS
www.DataSheet.co.kr BOX CAPACITORS IGBT APPLICATIONS MKP Series C4B L General characteristics - Self-Healing - Low losses - High ripple current - .
Kemet
C4BTFBX5400ZxNx - BOX CAPACITORS
www.DataSheet.co.kr BOX CAPACITORS IGBT APPLICATIONS MKP Series C4B L General characteristics - Self-Healing - Low losses - High ripple current - .
Infineon
PTFB091802FC - Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 920 – 960 MHz Description The PTFB091802FC LDMOS FET is designed for use in pow.
Infineon
PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT.
Infineon
PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PT.
Infineon
PTFB212507SH - Thermally-Enhanced High Power RF LDMOS FET
PTFB212507SH Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended f.
Infineon
PTFB213004F - High Power RF LDMOS Field Effect Transistor
PTFB213004F High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for clas.
Infineon
PTFB212503FL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB212503EL PTFB212503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-w.
Infineon
PTFB201402FC - High Power RF LDMOS Field Effect Transistor
PTFB201402FC High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs in.
Infineon
PTFB211503EL - Thermally-Enhanced High Power RF LDMOS FETs
PTFB211503EL PTFB211503FL Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211503EL and PTFB211503FL are therm.
Infineon Technologies
PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB19.
MICRON
PC28F512P30TFB - Micron Parallel NOR Flash Embedded Memory
512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BF.
NIKO-SEM
P1825HTFB - N-Channel MOSFET
NIKO-SEM N-Channel Enhancement Mode P1825HTFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 250V .
NIKO-SEM
P1820HTFB - N-Channel MOSFET
NIKO-SEM N-Channel Enhancement Mode P1820HTFB Field Effect Transistor TO-220F Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 200V .
Infineon
PTFB193404F - Thermally-Enhanced High Power RF LDMOS FETs
PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930 – 1990 MHz Description The PTFB193404F is a 340‑watt LDMOS FET intended fo.
Infineon Technologies
PTFB191501E - Thermally-Enhanced High Power RF LDMOS FETs
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB19.